III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy

Prucnal, S.; Glaser, Markus; Lugstein, Alois; Bertagnolli, E.; Stöger-Pollach, Michael; Zhou, Shengqiang; Helm, M.; Reichel, Denis; Rebohle, L.; Turek, M.; Żuk, J.; Skorupa, W.

doi:10.1007/s12274-014-0536-6

Cited by 13 publications

(11 citation statements)

References 30 publications

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“…This situation does not apply to the Si/InAs NWs, because the immiscibility between polar InAs and non-polar Si makes the Si/InAs heterojunction atomically abrupt. 23 For this reason, one cannot extract a spectrally differentiated signal arising from the HJ itself; however, the EM enhancement effect is clearly observed around the HJ in the profiles of Figure 3. The Raman intensity of Si is strongly enhanced in the region of the Si NW segment adjacent to the heterojunction.…”

Section: Resultsmentioning

confidence: 99%

Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires

Pura

Magdaleno

Muñoz-Segovia

et al. 2019

Journal of Applied Physics

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Semiconductor nanowires (NWs) present a great number of unique optical properties associated with their reduced dimension and internal structure. NWs are suitable for the fabrication of defect free Si/III-V heterostructures, allowing the combination of the properties of both Si and III-V compounds. We present here a study of the electromagnetic (EM) resonances on the atomically abrupt heterojunction of Si/InAs axially heterostructured NWs. We studied the electromagnetic response of Si/InAs heterojunctions sensed by means of Micro-Raman spectroscopy. These measurements reveal a high enhancement of the Si Raman signal when the incident laser beam is focused right on the Si/InAs interface. The experimental Raman observations are compared to finite element methods (FEM) simulations for the interaction of the focused laser beam with the heterostructured NW. The simulations explain why the enhancement is detected on the Si signal when illuminating the HJ and also provide a physical framework to understand the interaction between the incident

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Section: Resultsmentioning

confidence: 99%

Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires

Pura

Magdaleno

Muñoz-Segovia

et al. 2019

Journal of Applied Physics

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“…Recently, we published a novel approach for integrating III–V nanocrystallites (NCs) into Si NWs by combining ion implantation and flash lamp annealing, yielding InAs/Si NW heterostructures. 8 Within this study we present this approach to be capable for integrating GaAs NCs into crystalline Si NWs. Due to a modification of the ion implantation routine, NCs with increased axial lengths are obtained, exhibiting a metallic Ga segment adjacent to the GaAs NCs.…”

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confidence: 99%

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

et al. 2016

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In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

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“…Prucnal et al 33 developed a route to create Si/InAs heterostructure nanowires using a combination of sequential ion beam implantation and flash lamp annealing. First Si nanowires were grown by Au-catalyzed VLS mechanism using a low pressure CVD system.…”

Section: Axial Iii-v/iv Nanowire Heterostructuresmentioning

confidence: 99%

Hybrid III–V/Silicon Nanowires

Hocevar

Conesa‐Boj

Bakkers

2015

Semiconductors and Semimetals

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International audienceSemiconducting nanowires are emerging as a route to combine heavily mismatched materials. The nanowire dimensions facilitate the defect-free integration of the two most powerful semiconductor classes, group IVs and group III-Vs. These combinations may enhance the performance of existing device concepts, and also create new applications. In this chapter we review the recent progress in heteroepitaxial growth of III-V andIVmaterials. We highlight the advantage of using the small nanowire dimensions to facilitate accommodation of the lattice strain at the surface of the structures. Another advantage of the nanowire system is that anti phase boundaries are not formed, as there is only one nucleation site per wire. In this chapter, we will discuss three different heteroepitaxial III-V/Si morphologies, III-V nanowires on group IV substrates, and axial and radial heterojunctions. Advanced analysis techniques are used tocharacterise the quality of the heterointerfaces. Finally, we address potential applications of III-V/Si nanowires

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III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy

Cited by 13 publications

References 30 publications

Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires

Electromagnetic enhancement effect on the atomically abrupt heterojunction of Si/InAs heterostructured nanowires

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Hybrid III–V/Silicon Nanowires

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