In certain unconventional superconductors with sizable electronic correlations, the availability of closely competing pairing channels leads to characteristic soft collective fluctuations of the order parameters, which leave fingerprints in many observables and allow the phase competition to be scrutinized. Superconducting layered materials, where electron–electron interactions are enhanced with decreasing thickness, are promising candidates to display these correlation effects. In this work, the existence of a soft collective mode in single‐layer NbSe2, observed as a characteristic resonance excitation in high‐resolution tunneling spectra is reported. This resonance is observed along with higher harmonics, its frequency Ω/2Δ is anticorrelated with the local superconducting gap Δ, and its amplitude gradually vanishes by increasing the temperature and upon applying a magnetic field up to the critical values (TC and HC2), which sets an unambiguous link to the superconducting state. Aided by a microscopic model that captures the main experimental observations, this resonance is interpreted as a collective Leggett mode that represents the fluctuation toward a proximate f‐wave triplet state, due to subleading attraction in the triplet channel. These findings demonstrate the fundamental role of correlations in superconducting 2D transition metal dichalcogenides, opening a path toward unconventional superconductivity in simple, scalable, and transferable 2D superconductors.
Semiconductor nanowires (NWs) present a great number of unique optical properties associated with their reduced dimension and internal structure. NWs are suitable for the fabrication of defect free Si/III-V heterostructures, allowing the combination of the properties of both Si and III-V compounds. We present here a study of the electromagnetic (EM) resonances on the atomically abrupt heterojunction of Si/InAs axially heterostructured NWs. We studied the electromagnetic response of Si/InAs heterojunctions sensed by means of Micro-Raman spectroscopy. These measurements reveal a high enhancement of the Si Raman signal when the incident laser beam is focused right on the Si/InAs interface. The experimental Raman observations are compared to finite element methods (FEM) simulations for the interaction of the focused laser beam with the heterostructured NW. The simulations explain why the enhancement is detected on the Si signal when illuminating the HJ and also provide a physical framework to understand the interaction between the incident
While topological materials are not restricted to crystals, there is no efficient method to diagnose topology in non-crystalline solids such as amorphous materials. Here we introduce the structural spillage, a new indicator that predicts the unknown topological phase of a non-crystalline solid, which is compatible with first-principles calculations. We illustrate its potential with tight-binding and first-principles calculations of amorphous bismuth, predicting a bilayer to be a new topologically nontrivial material. Our work opens up the efficient prediction of non-crystalline solids via first-principles and high-throughput searches.
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