III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook

Zhang, Chen; Li, Xiuling

doi:10.1109/ted.2015.2498923

Cited by 53 publications

(32 citation statements)

References 100 publications

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“…Devices were fabricated starting from wurtzite n‐type InAs NWs grown on (111)B InAs substrates ( Figure a) exploiting gold‐catalyzed chemical beam epitaxy (see the Supporting Information and the Experimental Section for further details). NWs were mechanically detached from the growth substrate by means of sonication and dispersed in isopropyl alcohol (IPA) before being transferred to a prepatterned p ++ Si/SiO 2 substrate by dropcasting (see the Supporting Information for further details). Combs of contact electrodes (100 nm wide) were patterned using electron‐beam lithography on selected InAs NWs, while square gate electrodes (100 µm side, yellow‐colored in Figure b) were defined in proximity of the contacted NWs.…”

Section: Resultsmentioning

confidence: 99%

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

Lieb

Demontis

Prete

et al. 2018

Adv Funct Materials

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Here, the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO 2 /Si ++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic-like behavior in the nanowire is shown. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.

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Section: Resultsmentioning

confidence: 99%

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

Lieb

Demontis

Prete

et al. 2018

Adv Funct Materials

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“…III–V semiconducting nanowires, specifically those with heterostructure configurations, are drawing attention due to their unique properties promising for electronic and optoelectronic applications such as transistors, solar cells, and photodetectors . The InAs–GaSb heterostructure system is particularly suitable for various tunneling‐based device applications such as tunneling field effect transistors (TFETs) and diodes due to the broken bandgap alignment it exhibits .…”

Section: Introductionmentioning

confidence: 99%

Realization of Wurtzite GaSb Using InAs Nanowire Templates

Namazi

Gren

Nilsson

et al. 2018

Adv Funct Materials

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The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III-V nanowires are promising structures for exploring these effects, since for most III-V materials they readily grow in either wurtzite or zinc blende crystal structure. In III-Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nano wires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration-corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence band edge of wurtzite compared to zinc blende.

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“…Due to significantly higher bulk electron and hole mobilities, III-V materials such as In 0.53 Ga 0.47 As and the group IV material germanium, respectively, have been suggested as a replacement for silicon as the channel material in advanced complimentary metal-oxidesemiconductor (CMOS) fabrication processes. Other III-V materials such as InAs NWs have also attracted considerable interests for their potential in high-performance applications in optoelectronics [2], as well as low-power logic applications [3]. Notwithstanding the technological challenges of replacing silicon in conventional semiconductor manufacturing, there is comparatively little known about the electronic structure of these replacement materials when patterned or grown in nanowires structures with diameters of the order of a few nanometer.…”

Section: Introductionmentioning

confidence: 99%

“…The effective masses can be considered in a first approximation as indicating the relative electron mobility for nanowires of different crystallographic orientation with a smaller effective mass suggesting higher electron mobilityassuming a similar order of magnitude in various electron relaxation processes between the various III-V nanowires examined. On the other hand, a small effective mass is concomitant with a lower density of states (DoS) leading to a lower inversion charge density [3] for device applications. Lower inversion charge density and phenomena such as band-to-band tunneling (BTBT) can severely limit device performance for transistors operating in a ballistic regime [22,25].…”

mentioning

confidence: 99%

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

Razavi

Greer

2018

Materials Chemistry and Physics

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Electronic structures for In x Ga 1-x As nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nanometer are treated within the framework of density functional theory. Explicit band structures are calculated and properties relevant to nanoelectronic design are extracted including band gaps, effective masses, and density of states. The properties of these III-V nanowires are compared to silicon nanowires of comparable dimensions as a reference system. In nonpolar semiconductors, quantum confinement and surface chemistry are known to play a key role in the determination of nanowire electronic structure. In x Ga 1-x As nanowires have in addition effects due to alloy stoichiometry on the cation sublattice and due to the polar nature of the cleaved nanowire surfaces. The impact of these additional factors on the electronic structure for these polar semiconductor nanowires is shown to be significant and necessary for accurate treatment of electronic structure properties.

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III–V Nanowire Transistors for Low-Power Logic Applications: A Review and Outlook

Cited by 53 publications

References 100 publications

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors

Realization of Wurtzite GaSb Using InAs Nanowire Templates

Influence of surface stoichiometry and quantum confinement on the electronic structure of small diameter InxGa1-xAs nanowires

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