III-Nitride QD Lasers

Abstract

III-Nitrides QD lasers are studied in detail. Two types of QD structures are considered, GaN/Al x Ga 1-x N/AlN and In x Ga 1-x N/ In 0.04 Ga 0 . 96 N /GaN. Effects of: QD size; QD and WL composition; and doping are studied through the calculations of gain, threshold current, and intensity modulation bandwidth. It is shown that GaN QDs are less sensitive to size fluctuations. Bandwidth increases with doping and reducing QD size. The study covers approximately (300-600 nm) wavelength range.

Four-wave mixing in long wavelength III-nitride QD-SOAs

“…In addition to this, it is also to cover the possible spectral ranges in the III-nitride structures. Energy levels for the QDs are calculated using the parabolic band quantum-disc model [10,11]. The accuracy of the quantum disc model is checked by the comparison with experimental data or with numerical methods.…”

The Composition Effect on the Dynamics of Electrons in Sb-Based QD-SOAs

“…Quantum well WL thickness is taken as (9 nm). The accuracy of the quantum disc model is checked by a comparison with the experimental data and numerical methods [20,21]. The parameters used in the calculations of Sb-based structures are stated in Tables 2 and 3.…”

Promising features of In$_{0.5}$Ga$_{0.5}$N/Al$_{0.2}$Ga$_{0.8}$N quantum dot lasers

“…The band gap energy ranges from 0.7 eV for InN and 3.4 eV for GaN to 6.2 eV for AlN [4]. By adding indium and aluminum to GaN, ternary alloys can be formed with wide bandgap ranges of from 0.7 to 6.2 eV, which can cover the spectral range from deep ultraviolet (UV) to infrared (IR) at room temperature [5,6].…”