Four-wave mixing in long wavelength III-nitride QD-SOAs

Abstract

Four wave mixing analysis is stated for quantum dot semiconductor optical amplifiers (QD SOAs) using the propagation equations (including nonlinear propagation contribution) coupled with the QD rate equations under the saturation assumption. Long wavelength III-nitride InN and AlInN QD SOAs are simulated. Asymmetric behavior due to linewidth enhancement factor is assigned. P-doping increases efficiency. Lossless efficiency for InAlN QDs for longer radii is obtained. Carrier heating is shown to have a considerable effect and a detuning dependence is expected at most cases. InN QD SOAs shown to have higher efficiency.

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot

“…III-N semiconductors (InN, GaN, AlN, and their alloys) have exhibited considerable potential in developing the optoelectronic devices working in the ultra-violet and visible region, for example lasers, light emitting diodes, optical amplifiers, solar cells, and photodetectors. [30][31][32] A few recent results are indicating the small band-gap (∼ 0.7 eV) of InN. [33][34][35] This shows that the bandgap of ternary alloy InGaN could cover the whole solar spectrum, i.e., from infrared to ultraviolet.…”

Comparison between GaN and InN quantum‐dot semiconductor optical amplifiers

“…In our laboratory, Jbara et al studied the gain from the InN/InAlN QD structure which covers the range 300 to 3600 nm finding the importance of QD size in obtaining high gain, 8 they also studied four‐wave mixing characteristics of these structures 9 . Al‐Husseini et al studied GaN/Al .15 Ga .85 N and In .35 Ga .65 N/In .04 Ga .96 N QD structures 3 .…”