III-nitride blue microdisplays

Jiang, H. X.; Jin, S. X.; Li, J.; Shakya, Jagat; Lin, J. Y.

doi:10.1063/1.1351521

Cited by 279 publications

(183 citation statements)

References 7 publications

(4 reference statements)

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“…Clearly, further improvement of spatial resolution and simulation accuracy will enable a much better understanding of the mechanism of strain relaxation in the micro-GaN pillars, which is critically important to the design of novel micro/nano pixellated LED devices for a wide range of applications. 4,[16][17][18][19] This study focuses on the strain relaxation process in micro-pillars fabricated from an LED wafer optimized for emission at yellow-green wavelengths ($560 nm). These micro-pillars had a fixed height of 1.1 lm, and diameters systematically varied from 2 to 150 lm.…”

Section: Introductionmentioning

confidence: 99%

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Xie

Chen

Edwards

et al. 2012

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/40400/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging and numerical modeling. The pillars have diameters (d) ranging from 2 to 150 lm and were fabricated from a III-nitride light-emitting diode (LED) structure optimized for yellow-green emission at $560 nm. The CL mapping enables us to investigate strain relaxation in these pillars on a sub-micron scale and to confirm for the first time that a narrow ( 2 lm) edge blue-shift occurs even for the large InGaN/GaN pillars (d > 10 lm). The observed maximum blue-shift at the pillar edge exceeds 7 nm with respect to the pillar centre for the pillars with diameters in the 2-16 lm range. For the smallest pillar (d ¼ 2 lm), the total blue-shift at the edge is 17.5 nm including an 8.2 nm "global" blue-shift at the pillar centre in comparison with the unetched wafer. By using a finite element method with a boundary condition taking account of a strained GaN buffer layer which was neglected in previous simulation works, the strain distribution in the QWs of these pillars was simulated as a function of pillar diameter. The blue-shift in the QWs emission wavelength was then calculated from the strain-dependent changes in piezoelectric field, and the consequent modification of transition energy in the QWs. The simulation and experimental results agree well, confirming the necessity for considering the strained buffer layer in the strain simulation. These results provide not only significant insights into the mechanism of strain relaxation in these micro-pillars but also practical guidance for design of micro/nano LEDs.

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Section: Introductionmentioning

confidence: 99%

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Xie

Chen

Edwards

et al. 2012

Journal of Applied Physics

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“…The strong polarity of III-N bond makes these materials chemically stable and physically tolerant for the devices to work at high temperature, high frequency and in hostile environment [25]. These materials have earned the extensive research and industrial interest due to their promising technological capabilities for the electronic and opto-electronic devices [26]. Current applications of III-nitrides include ultraviolet/visible laser diodes, ultra-bright LEDs, UV detectors, high temperature electronics, high-density optical data storage, aerospace and automobiles technologies [6].…”

Section: Group Iii-nitride Semiconductorsmentioning

confidence: 99%

Neon and Manganese Ion Implantation into AlInN

Majid¹

2012

Ion Implantation

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“…Since the first demonstration of blue light emitting diodes (LEDs) [1] and blue laser diodes (LDs) [2] in the mid-"90s, GaN based optoelectronic devices have found important industrial applications in lighting [3] and display [4] technologies. Also, since then, GaN systems have offered other promising applications [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

Sarı¹,

Nizamoğlu²,

Choi³

et al. 2011

Opt. Express

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Abstract:We report on the electric field dependent carrier dynamics and optical absorption in nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which are surprisingly observed to be opposite to those polar ones of the same materials system and similar structure grown on c-plane. Confirmed by their time-resolved photoluminescence measurements and numerical analyses, we show that carrier lifetimes increase with increasing external electric field in nonpolar InGaN/GaN heterostructure epitaxy, whereas exactly the opposite occurs for the polar epitaxy. Moreover, we observe blue-shifting absorption spectra with increasing external electric field as a result of reversed quantum confined Stark effect in these polar structures, while we observe red-shifting absorption spectra with increasing external electric field because of standard quantum confined Stark effect in the nonpolar structures. We explain these opposite behaviors of external electric field dependence with the changing overlap of electron and hole wavefunctions in the context of Fermi"s golden rule. ©2011 Optical Society of America References and links1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High power InGaN single-quantum-well-structure blue and violet light-emitting diodes," Appl. Phys. Lett. 67(13), 1868-1870 (1995). 2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes," Appl. Phys. Lett. 69(26), 4056-4058 (1996).

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III-nitride blue microdisplays

Cited by 279 publications

References 7 publications

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Neon and Manganese Ion Implantation into AlInN

Opposite carrier dynamics and optical absorption characteristics under external electric field in nonpolar vs polar InGaN/GaN based quantum heterostructures

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