IGZO nanoparticle-modified silicon nanowires as extended-gate field-effect transistor pH sensors

Lin, Jing-Chie; Huang, Bohr–Ran; Yang, Yong

doi:10.1016/j.snb.2013.04.060

Cited by 52 publications

(24 citation statements)

References 23 publications

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“…There are a few recent reports on extended gate based ISFETs to understand the sensing properties of the IGZO material. Lin et al 9 used IGZO nanoparticles to improve the pH sensitivity of a silicon nanowire based extended gate field effect transistor (EGFET) and observed about 39% enhancement in the sensitivity from 36mV/pH to a maximum of 50mV/pH. Yang et al 10 used RF sputtered IGZO thin film on Si substrate instead of SiO 2 /Si (a more common structure) as a pH sensitive layer for the EGFET, and observed an increase in pH sensitivity from 41.5 mV/pH to 53.3 mV/pH by rapid thermal annealing (RTA) in N 2 ambience at 700 o C, which was further enhanced to 59.5mV/pH by varying the Ar/O 2 flow rates.…”

Section: Introductionmentioning

confidence: 99%

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Kumar

Panda

2015

AIP Advances

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The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

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Section: Introductionmentioning

confidence: 99%

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Kumar

Panda

2015

AIP Advances

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“…In this study, a semiconductor material, amorphous indium gallium zinc oxide (a-IGZO) [10,[14][15][16][17], is used for gas detection. IGZO-an n-type transparent semiconductor-plays an important role in LCD displays.…”

Section: Introductionmentioning

confidence: 99%

“…IGZO has great potential for development, because it combines the properties of flexibility, high electron mobility, and low-temperature fabrication. To date, few studies have focused on IGZO, and those that mostly discuss thin-film transistor components for different applications [15][16][17]. Therefore, we focus here on detecting ozone gas with IGZO films fabricated under varying conditions.…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive amorphous In–Ga–Zn–O films for ppb-level ozone sensing: Effects of deposition temperature

Jiang

Chang

et al. 2015

Sensors and Actuators B: Chemical

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“…Researchers have developed ion sensitive field effect transistors (ISFETs) on the basis of the metal oxide field effect transistor (MOSFET) [1]. Bergveld fabricated the first ISFET, a device with wide application as pH sensor [2].…”

Section: Introductionmentioning

confidence: 99%

“…Bergveld fabricated the first ISFET, a device with wide application as pH sensor [2]. ISFET devices have proven to be promising tools in various Jessica Colnaghi Fernandes jessicacf@pg.ffclrp.usp.br 1 Universidade de São Paulo, Av. Bandeirantes, 3900 Ribeirão Preto, SP, Brazil research domains, including DNA genotyping, food screening, and multi-analyte detection for biomedical applications [3] and [4].…”

Section: Introductionmentioning

confidence: 99%

Effective Area Effects on the Final Device Sensitivity of Ion Sensor Transducers

Fernandes

Mulato

2015

Braz J Phys

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Fluorine-doped tin oxide (SnO 2 :F) was used as the ion-sensing layer of an EGFET-pH sensor. The effective area affects the final results, as well as the sensor surface potential and sensitivity. The sensor miniaturization is highly required on medical applications, with that the effective area must be properly understood. Routine insertion and removal of total and partial surface areas in buffer solution were analyzed and compared. The results show that the routine changes considerable the sensor sensitivity. Variations in the double layer, Helmholtz plane, and Gouy-Chapman region play a significant role. The final sensitivities of the samples were compared with values available in the literature, even for other materials. The role that area normalization plays in quality assessment is discussed for proper future technological miniaturizations.

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IGZO nanoparticle-modified silicon nanowires as extended-gate field-effect transistor pH sensors

Cited by 52 publications

References 23 publications

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

Highly sensitive amorphous In–Ga–Zn–O films for ppb-level ozone sensing: Effects of deposition temperature

Effective Area Effects on the Final Device Sensitivity of Ion Sensor Transducers

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