IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters

Zhang, Jiangyong; Du, Mingxing; Jing, Lei; Wei, Kexin; Hurley, W.G.

doi:10.1109/tdmr.2019.2910182

Cited by 20 publications

(11 citation statements)

References 25 publications

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“…In the last decade, the research has moved from the study of the electrical quantities (such as the voltage and current waveforms) to their derivative functions, which are observed during the device commutation, called dynamic thermo-sensitive electrical parameter (DTSEP) methods. More specifically, the collector-emitter voltage change rate (dv ce /dt) and the collector current change rate (di c /dt) have been used as temperature estimators [117][118][119][120][121]. The temperature dependence of both dv ce /dt and di c /dt has been explored theoretically as well as confirmed experimentally [119][120][121].…”

Section: Current and Voltage Change Ratementioning

confidence: 99%

Two Decades of Condition Monitoring Methods for Power Devices

2021

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Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research.

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Section: Current and Voltage Change Ratementioning

confidence: 99%

Two Decades of Condition Monitoring Methods for Power Devices

2021

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“…The other approach uses dynamic electrical parameters to estimate T j . Such dynamic parameters include the threshold voltage V th [31], [33], [80]- [83], Miller-plateau voltage V gp [84], turn-on delay time t don [85], maximum current slope of turn-on dI/dt max,on [85], turn-off time t off [85], [86], turn-off delay time t doff [87], the peak value of V EE max during turn-off [88], [89] and the flatband voltage V fb [90]. The following describes the above methods.…”

Section: ) Monitoring the Junction Temperature T Jmentioning

confidence: 99%

“…The sensitivity varies from −29.11 mV/ • C to −74.72 mV/ • C, depending on the DC-link current and load current. In [89], T j with respect to the V EE ,max and I c is modelled through leastsquares fitting in the form of (25). Hence, it could be more practicable in the real-time T j estimation.…”

Section: M: Temperature Estimation By V Ee Maxmentioning

confidence: 99%

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

Liu

Yang

et al. 2020

IEEE Access

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Despite the emerging multi-phase and multi-level converters, two-level insulated gate bipolar transistor-based power converters are still widely used in industrial applications in nowadays. Thus, its reliability is of significant importance for ensuring industrial safety. In this paper, a review of the possibilities to ensure the reliable operation of these power converters is presented. The possible approaches are categorized into two groups: condition monitoring and fault-tolerant control. The former approach performs the monitoring methods of power converters, which enables the identification of device degradation to be realized. Accordingly, the mechanisms, indicators, and measuring methods of degradation are demonstrated in this paper to assist the design of condition-based maintenance. In contrast, the latter approach is a postfault one, where power converters remain the operation by activating the fault-tolerant units after faults are identified. For this approach, fault detection, fault isolation, and tolerant strategies are essential. Finally, the performance and cost-effectiveness of the two categories are discussed in this paper. INDEX TERMS Two-level power converter, reliability, condition Monitoring, fault tolerance, renewable energy application, insulated gate bipolar transistor.

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“…Yuan et al [7] proposed a self-calibration method by using the voltage derivative (dV/dt). Zhang et al [8] used the reverse voltage peak between the auxiliary emitter and power emitter as a TSEP. The advantage of this method is it doesn't need to destroy the package and the accuracy is high by choosing a suitable TSEP.…”

Section: Introductionmentioning

confidence: 99%

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

Liu

Jiao²,

Das

et al. 2021

IEEE Access

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Insulated gate bipolar transistor (IGBT) is widely used in power equipment, it generally works in complex circuit profiles and it is very difficult to measure or predict the thermal parameters of the module in real-time and evaluate the corresponding health status in the transient process. This paper develops a novel approach for solder-layer condition monitoring of IGBTs. In the approach a time-series nonparametric model of a power module is constructed, the current power and ambient temperature data are used to deduce the health state junction and case temperature. Three groups of time-series insulated gate bipolar transistors (IGBTs) data are used to train and verify the time-series nonparametric model for online conditions, the results show that the developed method has high accuracy. Compared with traditional methods, the time series non-parametric model method not only saves characteristic experiments but also saves the process of mathematical model construction. Besides, the proposed method also has the advantages of strong generalization and low equipment requirements which is useful for actual working conditions. Thereafter, another nonparametric model is built, the predicted junction temperature is used to estimate the collector voltage in the health state, and the percentage deviation of the measured collector voltage from the estimated voltage is used to do the state-of-health estimation of the IGBT and its accuracy is verified by the experiment result.INDEX TERMS IGBT, time-series ANN, state-of-health, junction temperature, artificial intelligence

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IGBT Junction Temperature Measurements: Inclusive of Dynamic Thermal Parameters

Cited by 20 publications

References 25 publications

Two Decades of Condition Monitoring Methods for Power Devices

Two Decades of Condition Monitoring Methods for Power Devices

Ensuring a Reliable Operation of Two-Level IGBT-Based Power Converters: A Review of Monitoring and Fault-Tolerant Approaches

Nonparametric Model-Based Online Junction Temperature and State-of-Health Estimation for Insulated Gate Bipolar Transistors

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