IGBT and Diode Loss Estimation Under Hysteresis Switching

Bazzi, Ali M.; Krein, P.T.; Kimball, Jonathan W.; Kepley, Kevin

doi:10.1109/tpel.2011.2164267

Cited by 91 publications

(37 citation statements)

References 20 publications

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“…The behavioral model alongside loss parameters taken from the device datasheet has been adopted in this paper due to its simplicity as in [24]. Moreover, in [25,26], the adopted behavioral model provides a good estimate of the actual losses as can be deduced from their comparative analysis.…”

Section: Estimation Of Power Losses In Igbt Power Modulesmentioning

confidence: 99%

“…These losses tend to be insignificant and can be ignored [27]; the diode turn-on losses can be ignored as well [28]. Therefore, significant power losses are usually caused by: (i) the conduction losses [26,29], (ii) the switching losses (IGBT turn on and off losses), (iii) and the diode turn-off losses (the reverse recovery losses). A typical inverter module datasheet is comprised of valuable information regarding switching and conduction losses of its specific IGBT and diode.…”

Section: Estimation Of Power Losses In Igbt Power Modulesmentioning

confidence: 99%

“…In the datasheet of the IGBT modules, the thermal resistances (R x ) of the major heat flow paths are provided, the notation 'x' can be {j,C,S,A} to denote the junction, case, sink and ambient, respectively. In addition, the zero-order thermal resistance network [26] of the IGBT module shown in Figure 8, is adopted in this study. This thermal model matches the fast-computational time associated with the proposed online variable switching frequency algorithms.…”

Section: Thermal Modeling Of the Igbt Power Modulementioning

confidence: 99%

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Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

et al. 2017

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Enhancing the performance of the voltage source inverters (VSIs) without changing the hardware structure has recently acquired an increased amount of interest. In this study, an optimization algorithm, enhancing the quality of the output power and the efficiency of three-phase grid connected VSIs is proposed. Towards that end, the proposed algorithm varies the switching frequency (f sw ) to maintain the best balance between switching losses of the insulated-gate-bipolar-transistor (IGBT) power module as well as the output power quality under all loading conditions, including the ambient temperature effect. Since there is a contradiction with these two measures in relation to the switching frequency, the theory of multi-objective optimization is employed. The proposed algorithm is executed on the platform of Altera ® DE2-115 field-programmable-gate-array (FPGA) in which the optimal value of the switching frequency is determined online without the need for heavy offline calculations and/or lookup tables. With adopting the proposed algorithm, there is an improvement in the VSI efficiency without degrading the output power quality. Therefore, the proposed algorithm enhances the lifetime of the IGBT power module because of reduced variations in the module's junction temperature. An experimental prototype is built, and experimental tests are conducted for the verification of the viability of the proposed algorithm.

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Section: Estimation Of Power Losses In Igbt Power Modulesmentioning

confidence: 99%

Section: Estimation Of Power Losses In Igbt Power Modulesmentioning

confidence: 99%

Section: Thermal Modeling Of the Igbt Power Modulementioning

confidence: 99%

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Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

et al. 2017

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“…Based on this information, the energy dissipation of switching elements must be calculated with the minimum computational requirement and high accuracy to deal with many SMs in an arm. For this objective, the polynomial curve fitting model [14][15] is applied. This method defines the energy dissipation with a function of current flowing into the switching element.…”

Section: Polynomial Curve Fitting Modelmentioning

confidence: 99%

Power Loss Modeling of Individual IGBT and Advanced Voltage Balancing Scheme for MMC in VSC-HVDC System

Son

Lee

Park³

2014

Journal of Electrical Engineering and Technology

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-This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for highlevel MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.

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“…To achieve this goal, the approaches using the complete model of switching device can be applied. Several detailed models [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] including the parasitic capacitances and inductances have been already proposed with a fully analytical treatment or sufficient experimental tests. Unfortunately, these models require the intensive computational efforts.…”

Section: Introductionmentioning

confidence: 99%

New Modeling of Switching Devices Considering Power Loss in Electromagnetic Transients Program Simulation

Kim

Park²,

Baek

2016

Journal of Electrical Engineering and Technology

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-This paper presents the modeling of insulated-gate bipolar transistor (IGBT) in electromagnetic transients program (EMTP) simulation for the reliable calculation of switching and conduction losses. The conventional approach considering the physical property of switching devices requires many attribute parameters and large computation efforts. In contrast, the proposed method uses the curve fitting and interpolation techniques based on typical switching waveforms and a userdefined component with variable resistances to capture the dynamic characteristics of IGBTs. Therefore, the simulation time can be efficiently reduced without losing the accuracy while avoiding the extremely small time step, which is required in simulation by the conventional method. The EMTP based simulation includes turn-on and turn-off transients of IGBT, saturation state, forward voltage of free-wheeling diode, and reverse recovery characteristics, etc. The effectiveness of proposed modeling for the EMTP simulation is verified by the comparison with experimental results obtained from practical implementation in hardware.

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IGBT and Diode Loss Estimation Under Hysteresis Switching

Cited by 91 publications

References 20 publications

Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

Power Loss Modeling of Individual IGBT and Advanced Voltage Balancing Scheme for MMC in VSC-HVDC System

New Modeling of Switching Devices Considering Power Loss in Electromagnetic Transients Program Simulation

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