2000
DOI: 10.1103/physrevb.61.3863
|View full text |Cite
|
Sign up to set email alerts
|

Identification of the neutral carbon 〈100〉-split interstitial in diamond

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

5
76
0

Year Published

2000
2000
2013
2013

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 98 publications
(81 citation statements)
references
References 30 publications
5
76
0
Order By: Relevance
“…This is consistent with the behavior of other semiconductors, such as diamond, where the interstitial is known to be mobile at low temperatures. 30 The products of the radioactive decays for 72 Zn→ 72 Ga → 72 Ge and 73 Ga→ 73 Ge include high-energy electrons, with mean energies in the region of 448.5, 502.6, and 85.6 keV for 73 Ga, 72 Ga, and 72 Zn, respectively. These could potentially cause the generation of defects in the crystals that might influence the PL intensities.…”
Section: Discussionmentioning
confidence: 99%
“…This is consistent with the behavior of other semiconductors, such as diamond, where the interstitial is known to be mobile at low temperatures. 30 The products of the radioactive decays for 72 Zn→ 72 Ga → 72 Ge and 73 Ga→ 73 Ge include high-energy electrons, with mean energies in the region of 448.5, 502.6, and 85.6 keV for 73 Ga, 72 Ga, and 72 Zn, respectively. These could potentially cause the generation of defects in the crystals that might influence the PL intensities.…”
Section: Discussionmentioning
confidence: 99%
“…Infrared measurements of the as-grown sample showed it to contain 9͑1͒ ppm ͑parts per million carbon atoms͒ N S 0 . The sample was irradiated with 1.9 MeV electrons to a dose of 3 ϫ 10 18 e / cm 2 , yielding a vacancy concentration 21 of ϳ25 ppm. The sample was subsequently annealed at 1100 K in a nonoxidizing atmosphere for 4 h.…”
Section: Methodsmentioning
confidence: 99%
“…The reaction mixture was then subjected to HPHT conditions in the diamond stable region producing material with ϳ150 ppm N S 0 , as measured using EPR. The sample was HPHT annealed leading to Ͼ80% aggregation of the nitrogen to A centers ͑nitrogen pairs͒ and then irradiated with 1.5 MeV electrons to a dose of 4 ϫ 10 17 e / cm 2 , leading to a vacancy concentration 21 of ϳ3 ppm. ͑This sample contains different growth sectors with differing N S concentrations so that in some sectors the vacancy concentration was of the same order of magnitude as the N S concentration.͒ After the irradiation the sample was annealed in a nonoxidizing atmosphere at 1100 K for 4 h.…”
Section: Methodsmentioning
confidence: 99%
“…ESR measurements of the interstitial carbon color center, R2, suggest that some recombination occurs during irradiation unless the diamond is cooled well below room temperature [169,159] (not the case here), and that during annealing the remaining R2 centers become mobile at a threshold temperature in the 400 − 700…”
mentioning
confidence: 88%