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Cantin, J. L.; Bardeleben, Jürgen von; Shishkin, Y.; Ke, Yanxiong; Devaty, R. P.; Choyke, W. J.

doi:10.1103/physrevlett.92.015502

Cited by 92 publications

(72 citation statements)

References 19 publications

(30 reference statements)

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“…More recently, electron paramagnetic resonance (EPR) experiments on oxidized porous SiC identified carbon dangling bonds. 7 These defects could successfully be passivated by H 2 at 400…”

Section: Introductionmentioning

confidence: 99%

Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals

et al. 2011

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“…More recently, electron paramagnetic resonance (EPR) experiments on oxidized porous SiC identified carbon dangling bonds. 7 These defects could successfully be passivated by H 2 at 400…”

Section: Introductionmentioning

confidence: 99%

Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals

et al. 2011

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“…9,10 The presence of C dangling bonds, however, has been proven by electron paramagnetic resonance ͑EPR͒. 21,22 Theoretical modeling of the interface between crystalline SiC and vitreous SiO 2 is very difficult. Defects of the interface have so far only been considered either in the SiC ͑Ref.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of the mechanism of dry oxidation of4H-SiC

et al. 2005

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Possible defect structures, arising from the interaction of O 2 molecules with an ideal portion of the SiC/ SiO 2 interface, have been investigated systematically using density functional theory. Based on the calculated total energies and assuming thermal quasiequilibrium during oxidation, the most likely routes leading to complete oxidation have been determined. The defect structures produced along these routes will remain at the interface in significant concentration when stopping the oxidation process. The results obtained for their properties are well supported by experimental findings about the SiC/ SiO 2 interface. It is found that carbon-carbon bonds can explain most of the observed interface states but not the high density near the conduction band of 4H-SiC.

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“…In addition, a formation of SiO x C y species have been also observed [3][4][5]. Such an excess C including carbon clusters and Si/C dangling bonds in the region near the interface have often been discussed as a possible cause of the interface traps [6,7]. The details in the defects generation in the region near the interface between SiO 2 and SiC are still discussed.…”

Section: Introductionmentioning

confidence: 95%