Defect levels of carbon-related defects at the SiC/SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>interface from hybrid functionals

Devynck, Fabien; Alkauskas, Audrius; Broqvist, Peter; Pasquarello, Alfredo

doi:10.1103/physrevb.83.195319

Cited by 48 publications

(36 citation statements)

References 28 publications

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“…In fact, according to qualitative EELS spectra simulations (see supplementary material S.3), a mixed sp 2 /sp 3 carbon coordination with silicon, Manuscript accepted for publication -Nanotechnology 29 (2018) 397502 https://doi.org/10.1088/1361-6528/aad129 oxygen and nitrogen can explain the experimental results shown in Fig.7. In literature, single-carbon related oxide defects in the SiO2/4H-SiC system have been debated 27,28 . More recently, ab-initio calculation also on carbon dimers C=C and also more complex defects (C-C=C) were presented 29 .…”

Section: Resultsmentioning

confidence: 99%

Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

et al. 2018

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Studying the electrical and structural properties of the interface of the gate oxide (SiO) with silicon carbide (4H-SiC) is a fundamental topic, with important implications for understanding and optimising the performances of metal-oxide-semiconductor field effect transistor (MOSFETs). In this paper, near interface oxide traps (NIOTs) in lateral 4H-SiC MOSFETs were investigated combining transient gate capacitance measurements (C-t) and state of the art scanning transmission electron microscopy in electron energy loss spectroscopy (STEM-EELS) with sub-nm resolution. The C-t measurements as a function of temperature indicated that the effective NIOTs discharge time is temperature independent and electrons from NIOTs are emitted toward the semiconductor via-tunnelling. The NIOTs discharge time was modelled also taking into account the interface state density in a tunnelling relaxation model and it allowed us to locate traps within a tunnelling distance of up to 1.3 nm from the SiO/4H-SiC interface. On the other hand, sub-nm resolution STEM-EELS revealed the presence of a non-abrupt (NA) SiO/4H-SiC interface. The NA interface shows the re-arrangement of the carbon atoms in a sub-stoichiometric SiO matrix. A mixed sp/sp carbon hybridization in the NA interface region suggests that the interfacial carbon atoms have lost their tetrahedral SiC coordination.

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Section: Resultsmentioning

confidence: 99%

Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

et al. 2018

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“…The recombination centers can lower the open‐circuit voltage in organic photovoltaic devices, decreasing the number of carriers dissociated at the electron donor/acceptor interface 27. Indeed, at the C 60 /α‐6T interface, structural defects in the C 60 film are expected due to a rough surface of the α‐6T film, creating localized states in the midgap of the C 60 film 28.…”

Section: Resultsmentioning

confidence: 99%

Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/acceptor (C₆₀) interface and mobility improvement

Park

2013

Physica Rapid Research Ltrs

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We studied various aspects relating to surface charge‐transfer‐induced doping at an organic/organic interface using in situ electrical measurements with a field‐effect transistor (FET) during the formation of the electron donor/acceptor interface. Adsorption of the electron‐accepting molecules (C60) on top of the electron donating molecules (α‐6T) led to an increase in the FET hole mobility in an α‐6T film. Under illumination, the FET hole mobility in the α‐6T film with C60 deposition was significantly increased in comparison with that in the dark due to exciton dissociation at the C60/α‐6T interface, resulting in a large threshold voltage shift. The origin of the mobility increase is explained by the multiple trapping and release (MTR) model in which the mobility is determined by the carrier density. Various phenomena relevant to charge transfer and charge transport at the organic/organic interface are reported and their origins are discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Using this slab model, they calculated the charge transition levels of several defects at the SiO 2 /SiC interface [18,19]. Nevertheless, this slab model has a surface polarization effect, which may affect the calculated defect levels.…”

Section: Introductionmentioning

confidence: 99%

An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

Zhao

Wang

2015

Solid State Communications

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Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals

Cited by 48 publications

References 28 publications

Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/acceptor (C₆₀) interface and mobility improvement

An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

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Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals

Cited by 48 publications

References 28 publications

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/acceptor (C60) interface and mobility improvement

An amorphous SiO2/4H-SiC(0001) interface: Band offsets and accurate charge transition levels of typical defects

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Product

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Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electron trapping at SiO₂/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Charge‐transfer‐induced doping at an electron donor (α‐sexithiophene)/acceptor (C₆₀) interface and mobility improvement