Identification of some key parameters for photoelectric laser simulation of IC: an experimental approach

Perdu, Philippe; Desplats, Romain; Sanchez, Kévin; Beaudoin, Félix; Lewis, Dean; Pouget, Vincent; Douin, Alexandre; Fouillat, P.

doi:10.1109/ipfa.2005.1469124

Cited by 4 publications

(3 citation statements)

References 17 publications

(13 reference statements)

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“…Future work characterizing PLS effect on a PMOS transistor under PLS should be led. The test with a pulsed laser will also be conducted to explore higher laser energy ranges [14]. …”

Section: Discussionmentioning

confidence: 99%

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

Llido

Sarafianos

Gagliano

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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This study is driven by the need analysis methodologies based on laser/silicon the functional response of an integrated cir stimulation. It is therefore mandatory to under of elementary devices to laser illumination, in predict the behavior of more complex cir characterizes and analyses photoelectric effect 1064 nm wavelength laser on a 90 nm transistor. Comparisons between photocurren channel transistor, or in function of its sta presented. Experimental measurements are c Elements Modeling Technology Computer Aid analyses, which gives a physical insight of carr transport in the devices.

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“…Future work characterizing PLS effect on a PMOS transistor under PLS should be led. The test with a pulsed laser will also be conducted to explore higher laser energy ranges [14]. …”

Section: Discussionmentioning

confidence: 99%

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

Llido

Sarafianos

Gagliano

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

Self Cite

View full text Add to dashboard Cite

show abstract

“…Future work will characterize PLS effect on simple logic gates or MOS inverter under PLS. The test with a pulsed laser will also be conducted to explore higher laser energy ranges [17].…”

Section: Discussionmentioning

confidence: 99%

Characterization and TCAD Simulation of 90nm Technology PMOS Transistor under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

Llido

Sarafianos

Gagliano

et al. 2012

International Symposium for Testing and Failure Analysis

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This study responds to our need to optimize failure analysis methodologies based on laser/silicon interactions, using the functional response of an integrated circuit to local laser stimulation. Thus it is mandatory to understand the behavior of elementary devices under laser stimulation, in order to model and anticipate the behavior of more complex circuits. This paper characterizes and analyses effects induced by a static photoelectric laser on a 90 nm technology PMOS transistor. Comparisons between currents induced in short or long channel transistors for both ON and OFF states are made. Experimental measurements are correlated to Finite Elements Modeling Technology Computer Aided Design (TCAD) analyses. These physical simulations give a physical insight of carriers generation and charge transport phenomena in the devices.

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“…Some applications are local electrical testing inside integrated circuits by laser. The carrier injection process namely photoelectric laser stimulation (PLS) can be synchronized with static or dynamic electrical signals in failure-analysis tests [129], or after the fabrication as a parametric measurement, improving the investigation time because of the high repetition rate capability and the simplicity of laser experiments compared to electrical methods. The laser approach is also attractive to emulate more generally accelerated aging or radiative effects to test their robustness in hard condition environments (e.g.…”

Section: Applications In Microelectronicsmentioning

confidence: 99%

Internal Structuring of Semiconductors with Ultrafast Lasers: Opening a Route to Three-Dimensional Silicon Photonics

Grojo

Chambonneau²,

Lei³

et al. 2023

Springer Series in Optical Sciences

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Important challenges remain to achieve reliable three-dimensional laser writing inside semiconductors as important as silicon. Experiments show that nonlinear energy deposition with long infrared laser pulses can modify silicon internally. However, the level of controllability is extremely limited compared with the femtosecond laser nanostructuring regimes reported in transparent dielectrics. Recent efforts have concentrated on the specificities of the bulk silicon response to tightlyfocused ultrashort pulses. The strong propagation nonlinearities inherent to narrow band-gap semiconductors limit the space-time laser energy localization and prevent in most cases material breakdown with the shortest pulses. This Chapter proposes an overview of this emerging topic and the practical solutions to this problem. It also discusses the potential of three-dimensional laser nanostructuring in narrow band-gap semiconductors to address applications in different fields. Among them, the first demonstrations of refractive index laser engineering in silicon open the perspective to move silicon photonics from two-dimensional systems to monolithic

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Identification of some key parameters for photoelectric laser simulation of IC: an experimental approach

Cited by 4 publications

References 17 publications

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

Characterization and TCAD simulation of 90 nm technology transistors under continous photoelectric laser stimulation for failure analysis improvement

Characterization and TCAD Simulation of 90nm Technology PMOS Transistor under Continuous Photoelectric Laser Stimulation for Failure Analysis Improvement

Internal Structuring of Semiconductors with Ultrafast Lasers: Opening a Route to Three-Dimensional Silicon Photonics

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