Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Subramani, Nandha Kumar; Couvidat, Julien; Hajjar, Ahmad Al; Nallatamby, Jean-Christophe; Sommet, Raphaël; Quéré, Raymond

doi:10.1109/jeds.2017.2672685

Cited by 85 publications

(59 citation statements)

References 21 publications

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“…The novel investigation method proposed by this research serves as an efficient and low-cost testing method for the S 21 detection circuit. As introduced in Section 1, related works in various domains [12][13][14][15][16][17][18][19][20][21][22][23][24] have provided valuable inspiration and knowledge for the development of the method. Because the investigation method is particularly designed for the S 21 detection circuit, counterparts highly comparable with the method seem to be absent in the literature.…”

Section: Comparisons With Past Workmentioning

confidence: 99%

“…Moreover, diverse works [20][21][22][23][24] have demonstrated intelligent strategies to analyze the performance of ICs. In [20], Bandler proposed the concept of network decomposition, which views a large network as mutually uncoupled subnetworks.…”

Section: Introductionmentioning

confidence: 99%

“…In [23], Huang employed machine-training techniques to reduce the excessive costs of specification testing in analog and RF circuits. In [24], Subramani demonstrated the exploration of the activation energy and cross section of the traps by using a more economical method.…”

Section: Introductionmentioning

confidence: 99%

“…The above great works [12][13][14][15][16][17][18][19][20][21][22][23][24] inspired this research to propose a novel investigation method for the S 21 detection circuit.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Investigation Method for the S21 Detection Circuit

Lee

2020

Int. j. eng. technol. innov.

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This research proposes a novel method to investigate the performance of the S21 detection circuit. Aiming at low frequencies or DC, the method serves as an efficient way of verification and enjoys the benefit of low testing costs. The novel investigation method is demonstrated at 50 MHz and verified by the scattering parameters at 11.05 GHz. Based on the investigation, a model of process variations is constructed. The length of the interface paths is estimated by the model to be 63µm, which is consistent with the corresponding length of 74.6µm in the layout. For the measured phase and magnitude, the model indicates that the process variations in the device under test cause errors of 18.91% and 1.27%, whereas those in the interface paths lead to errors of 1.83% and 1%. Based on the model, practical recommendations are also proposed to further improve the measurement precision in the future.

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Section: Comparisons With Past Workmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The above great works [12][13][14][15][16][17][18][19][20][21][22][23][24] inspired this research to propose a novel investigation method for the S 21 detection circuit.…”

Section: Introductionmentioning

confidence: 99%

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A Novel Investigation Method for the S21 Detection Circuit

Lee

2020

Int. j. eng. technol. innov.

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“…The peaks observed correspond to the existence of traps in the device structure. The traps cut-off frequencies have been extracted at various temperatures and then, by using the Arrhenius equation [6], the trap activation energy (Ea) and capture cross sections (σn) have been determined. A correct extrapolation of the time constant of the de-trapping processes needs to evaluate the self-heating effects of the device.…”

Section: B Trapping Effectsmentioning

confidence: 99%

Trapping Investigation of the GaN HEMT Devices Using the Low Frequency Noise Characterization

Bouslama¹,

Nallatamby²,

Prigent³

2019

EasyChair Preprints

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This paper, proposes the characterization of the signature of traps existing in the new AlGaN/GaN HEMT of 0.15 μm ultra-short gate length and 8x50 μm gate width through the output and the input Low Frequency (LF) noise measurement technique. These measurements were performed for varying chuck temperatures (Tchuck) ranging between 25 °C and 125 °C and for the same biasing condition by measuring the output or input noise spectral density. The output drain noise spectral density characteristics demonstrate the existence of an acceptor-like traps. The peak value of those traps shifts towards higher frequencies as the temperature increases. The activation energy Ea around 0.51 eV and the cross section σn around 5x10-15 cm2 were extracted using Arrhenius equation. Furthermore, the input gate noise spectral density characteristics demonstrate the presence of another type of traps. The peak of this traps does not show the frequency shift as the temperature increases. The leakage current measured before and after LF measurements for VGS = -6 V, -7 V and for VDS varying from 0 V to 10 V remains lower than 40 μA/mm.

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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Xu,

Guo,

Tao

et al. 2024

Chemistry A European J

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Using computer‐aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current‐collapse magnitude (∆CC) in 0.5‐μm gated GaN‐based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de‐trapping of Fe‐related traps at the gate‐drain edge is responsible for current collapse. The concentration and decay rate of the doping region have a more significant impact on current collapse than the depth. Increased trap state density near two‐dimensional electron gas (2DEG) channel caused by deep‐level acceptors would boost ∆CC. However, a minor dynamic reduction in 2DEG density (nT) induces a relatively small ∆CC. By adjusting the concentration, decay rate, and depth of the doping region, ∆CC of GaN‐based Radio Frequency (RF) HEMTs can be reduced by approximately 50.3%.The optimized distribution of Fe doping discussed in this work helps to prepare GaN‐based RF HEMTs with a limited current collapse effect.

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Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations

Abstract: International audienc

Cited by 85 publications

References 21 publications

A Novel Investigation Method for the S21 Detection Circuit

A Novel Investigation Method for the S21 Detection Circuit

Trapping Investigation of the GaN HEMT Devices Using the Low Frequency Noise Characterization

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

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