Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs
Linling Xu,
Hui Guo,
Jiaqi Tao
et al.
Abstract:Using computer‐aided design (TCAD) simulation, the impact of the Fe doping profile, including concentration, decay rate, and depth of the doping region on current‐collapse magnitude (∆CC) in 0.5‐μm gated GaN‐based high electron mobility transistors (HEMTs) is systematically investigated. Accurate simulation models are established and developed to facilitate the fabrication of electronics. It is elucidated that the intricate interplay between trapping and de‐trapping of Fe‐related traps at the gate‐drain edge i… Show more
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