Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

Ismail, K.; LeGoues, F. K.; Saenger, K. L.; Arafa, M.; Chu, J. O.; Mooney, P. M.; Meyerson, B.S.

doi:10.1103/physrevlett.73.3447

Cited by 154 publications

(71 citation statements)

References 9 publications

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“…The MDs at the upper interface are one of the main factors that limit carrier mobility enhancement in Si/ SiGe devices. 2 In addition, the underlying dislocations can induce typical crosshatch roughness on the virtual substrate, which may degrade the strained Si quality and device performance. 3,4 Therefore, it is crucial to carefully explore the distribution of underlying dislocations.…”

mentioning

confidence: 99%

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2

Yuan

Sekiguchi

Niitsuma

et al. 2005

Applied Physics Letters

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confidence: 99%

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2

Yuan

Sekiguchi

Niitsuma

et al. 2005

Applied Physics Letters

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“…However, when threading dislocations are already present, the critical thickness is an accurate predictor of misfit dislocation formation. 35 SiGe-onInsulator ͑SGOI͒ substrates have a TDD of ϳ10 6 per cm 2 and have been fabricated as thin as 9 nm. 36 A strained Si film deposited on this SGOI substrate would be expected to follow the relaxation behavior described in Fig.…”

Section: E Relaxation Without Misfit Dislocation Formationmentioning

confidence: 99%

SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study

Rehder

Inoki

Kuan

et al. 2003

Journal of Applied Physics

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The strain relaxation behavior of Si 0.82 Ge 0.18 films on silicon-on-insulator ͑SOI͒ substrates was investigated for films grown beyond the critical thickness and strain-relaxed during growth and metastable films, grown beyond the critical thickness, which relaxed during subsequent thermal annealing. The thickness of the top silicon layer of the SOI substrate was varied over a range from 40 nm to 10 m. In all cases, the SiGe film relaxation occurred via the nucleation and propagation of dislocations with the same onset of film relaxation and same relaxation rate for both SOI and bulk Si substrates. The SOI substrate does not serve as a compliant substrate but does alter the dislocation structure and motion. The buried amorphous oxide layer in the SOI substrate leads to the relaxation of the dislocation strain field through the removal of the dislocation line tension. This removal of the dislocation line tension drives dislocation motion and leads to the development of strain in the thin Si layer of the SOI substrate. Models of this dislocation behavior for SiGe growth on the SOI substrate are presented and calculation of the equilibrium strain of the thin Si substrate layer closely fits the measured strain of several SOI substrates. The article addresses the implications of the modified dislocation structure and kinetics for film relaxation on SOI substrates.

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“…For example, it has been reported that strained Si exhibits high carrier mobility [1] [2] [3] [4]. Many researchers, including ourselves, have proposed various methods of producing strain-relaxed SiGe as a virtual substrate for strained Si [5]- [19].…”

Section: Introductionmentioning

confidence: 99%

TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

Yamanaka¹,

Inoue²,

Arimoto³

et al. 2017

MSCE

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Strained Si and its related materials, such as strained SiGe and strained silicon-carbon alloy (Si-C), are receiving tremendous interest due to their high carrier mobility. In this study we carry out a basic investigation of the change in microstructure of ion-implanted Si-C solid solution caused by rapid thermal annealing, because it is very important to realize a field-effect transistor made of this new material. The microstructures of arsenic-ion-, boron-ion-, and silicon-ion-implanted Si 0.99 C 0.01 specimens upon thermal annealing are observed using transmission electron microscopy, and it is revealed that the rate of solid-state crystallization of ion-implanted Si-C is slower than that of the ion-implanted Si.

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Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

Cited by 154 publications

References 9 publications

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si∕Si0.8Ge0.2

SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study

TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing

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