ID-Cut-off Grinding of Brittle Materials

Brinksmeier, E.; Schmieden, W. v.; Trumpold, H.

doi:10.1016/s0007-8506(07)62590-6

Cited by 20 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…cut-off grinding (also known as i.d. blade sawing or annular blade sawing) was widely employed in the 1970s and 1980s for slicing semiconductor rods into wafers with a thickness of less than 1 mm [10,[18][19][20][21][22]. Figure 3 illustrates the i.d.…”

Section: Inner Diameter Cut-off Grindingmentioning

confidence: 99%

Machining processes for sapphire wafers: a literature review

Pei

Funkenbusch

2011

Proceedings of the Institution of Mechanical Engineers, Part B:

View full text Add to dashboard Cite

Sapphire wafers are widely used as the substrates for fabricating GaN light-emitting diodes (LEDs). The quality of LEDs depends directly on the quality of the sapphire wafers. A series of machining processes is required to turn sapphire barstock into wafers with the desired geometry and surface quality. This paper reviews the literature on various machining processes for sapphire wafers: slicing (including outer diameter cut-off grinding, inner diameter cut-off grinding, loose abrasive multi-wire sawing, fixed abrasive slicing, and fixed abrasive multi-wire sawing), flattening (including lapping and grinding), and surface finishing (including mechanical polishing and chemical mechanical polishing). New machining technologies are also introduced.

show abstract

Section: Inner Diameter Cut-off Grindingmentioning

confidence: 99%

Machining processes for sapphire wafers: a literature review

Pei

Funkenbusch

2011

Proceedings of the Institution of Mechanical Engineers, Part B:

View full text Add to dashboard Cite

show abstract

“…Grinding process can be considered to be the integrative effect of micro-cutting by lots of single grits distributing in the grinding wheel [4][5], so the grinding process can be analyzed by the grinding parameters of single grit in the grinding wheel. The grinding parameters of single grit may be described by three grinding factors including maximal grinding thickness a gm of the grit, grinding arc length l g of the grit(or the geometric contact length between the grinding wheel and specimen) when the grinding wheel rotates one circle and the height of sector notch h s .…”

Section: Grinding Parameters In Creep Feed Grindingmentioning

confidence: 99%

Studies on the Grinding Properties of Ultrasonic Assisted Creep Feed Grinding Using Grinding Wheel with Small Diameter

Zheng

Liu

2009

KEM

View full text Add to dashboard Cite

An ultrasonic grinding technology named NC-Contour Evolution Ultrasonic Assisted Creep Feed Grinding that using a simple shaped diamond grinding wheel with small diameter is presented to solve the machining problem of ceramic blade surfaces in integral impeller, which is similar to numerical control profile modeling milling. The grinding parameters of single grit in the grinding wheel are selected as the objective to make clear the grinding properties of creep feed grinding and ultrasonic grinding using grinding wheel with small diameter so as to explore the suitable processing parameters to machine ceramic blade surfaces in integral impeller in theory.

show abstract

“…There is a mechanism to feed the ingot (or the blade) toward the blade (or the ingot). More information about ID sawing can be found in the literature [14,23,[71][72][73][74][75].…”

Section: Interrelationship Between Grinding and Slicingmentioning

confidence: 99%

Grinding of silicon wafers: A review from historical perspectives

Pei

Fisher

Liu

2008

International Journal of Machine Tools and Manufacture

150

View full text Add to dashboard Cite

The majority of semiconductor devices are built on silicon wafers. Manufacturing of high quality silicon wafers involves several machining processes including grinding. This review paper discusses historical perspectives on grinding of silicon wafers, impacts of wafer size progression on applications of grinding in silicon wafer manufacturing, and interrelationships between grinding and two other silicon machining processes (slicing and polishing). It is intended to help * Corresponding author. Tel.: +1 785 532 3436; fax: +1 785 532 3738. E-mail address: zpei@ksu.edu (Z.J. Pei). 1 readers to gain a more comprehensive view on grinding of silicon wafers, and to be instrumental for research and development in grinding of wafers made from other materials (such as gallium arsenide, germanium, lithium niobate, sapphire, and silicon carbide).

show abstract

ID-Cut-off Grinding of Brittle Materials

Cited by 20 publications

References 1 publication

Machining processes for sapphire wafers: a literature review

Machining processes for sapphire wafers: a literature review

Studies on the Grinding Properties of Ultrasonic Assisted Creep Feed Grinding Using Grinding Wheel with Small Diameter

Grinding of silicon wafers: A review from historical perspectives

Contact Info

Product

Resources

About