ICC silicon microbolometer development program

Liddiard, Kevin Charles; Knauth, Jonathan P.; Balick, Steven M.; Bai, Xu; Robinson, Nigel

doi:10.1117/12.445298

Cited by 4 publications

(2 citation statements)

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“…Damage thresholds for morphological microbolometer detector damage were determined to be 200 W/cm 2 and 0.4-0.5 J/cm 2 (on the detector surface) for continuous and pulsed laser radiation, respectively [25,26]. Morphological damage to MCT surfaces was studied by Garg and co-workers with reflectance measurements [27].…”

Section: In Band Damagementioning

confidence: 99%

Laser dazzling: an overview

Steinvall

2023

Technologies for Optical Countermeasures XIX

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Laser dazzling is both a threat and offers a survival capability in military scenarios. Dazzling may blind or mislead optically directed or guided weapons as well as temporarily dazzle operators in critical situations. Laser dazzlers can also serve as warning devices in checkpoint and riot control and other situations. While laser damage of sensors may be an alternative, this is generally more difficult due to the demand on high energy short pulse lasers. The development of small (handheld or weapon mounted) compact laser dazzlers at various wavelength continue to develop and are being a threat to sensors in all wavelength bands, from the visible to thermal IR. This paper will discuss some tactical considerations for the use of laser dazzlers in all optical bands from the visible to thermal IR.

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Section: In Band Damagementioning

confidence: 99%

Laser dazzling: an overview

Steinvall

2023

Technologies for Optical Countermeasures XIX

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“…The ways towards this target particularly are decreasing the physical size of detector arrays by making smaller pixels, less than 30 µm 1,2,3,4 , decreasing the cost of objective, operating with neither shutter nor temperature stabilization, using on-chip vacuum packaging 5,6 and replacing VO x arrays with, e.g., Si 7,8,9 or SiGe 10 ones. In this paper, the state-of-the-art arrays built around polycrystalline SiGe technology are discussed.…”

Section: Introductionmentioning

confidence: 99%

Optimization of design and technology for uncooled poly-SiGe microbolometer arrays

et al. 2002

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The performance characteristics of polycrystalline SiGe microbolometer arrays are the subject of both design and technological optimizations performed in this work to move the arrays towards the production. An NETD of 90 mK at a time constant of 11 ms is already achievable for the best non-optimized 60 µm pixel, 0.26 µm thick bolometer design in a linear 128 pixel array according to the results of LWIR characterization. The performance of linear 32, 64 and 128 element arrays of 50-, 60-and 75-µm pixel bolometers made with 0.26…0.13 µm thin poly-SiGe on several wafer runs was the starting point for the computer simulation of detector features and evolution of its characteristics under reading bias pulses. The material properties and parameters of read-outs are taken into account in the optimization of the design parameters of arrays as well. The typical bolometer characteristics achieved on the latest wafer run if processed with the PC-program accounting for the read-out and heating effects, result in an average NETD of 70 mK at a time constant of 17 ms for 50 µm pixels in a 320×240 array. Despite less TCR-to-1/f noise ratio as compared with VO x arrays, the several advantages make poly-SiGe a very attractive candidate for an uncooled array, i.e. full compatibility with CMOS technology, better characteristics/price ratio, resistance nonuniformity σ/mean <0.2%, and a possibility to release extrathin structures.

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Characterization of amorphous GexSi1−xOy for micromachined uncooled bolometer applications

Ahmed

Tait

2003

Journal of Applied Physics

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Thin films of GexSi1−xOy were prepared by reactive magnetron sputtering using simultaneous sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon and oxygen content were varied from 0 to 30 at. % separately and the effect of the addition of each element on electrical and optical properties of amorphous germanium was studied. The electrical and optical behavior of the compound with varying elemental composition is explained based on the oxidation behavior of the Si and Ge. Increasing the silicon content was found to inhibit the formation of germanium–oxygen bonds. Values of temperature coefficient of resistance as high as −5% K−1 were obtained at moderate resistivity values around 3.8×104 Ω cm. These characteristics could be used to enhance the performance of micromachined uncooled bolometers. The composition control enabled by cosputtering components allows resistivity and activation energy to be tailored to suit different design specifications.

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ICC silicon microbolometer development program

Cited by 4 publications

References 0 publications

Laser dazzling: an overview

Laser dazzling: an overview

Optimization of design and technology for uncooled poly-SiGe microbolometer arrays

Characterization of amorphous GexSi1−xOy for micromachined uncooled bolometer applications

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