I–V Characteristics of Schottky/Metal-Insulator-Semiconductor Diodes with Tunnel Thin Barriers

Abstract

Current–voltage (I–V) characteristics and their temperature dependence, of Schottky and metal-insulator-semiconductor diodes with tunnel thin insulating layers, are theoretically and experimentally studied. The effective barrier height of a Schottky diode becomes low and strongly dependent upon the applied voltage, when the impurity density of the semiconductor increases such that the tunnel current dominates the total curent. The I–V curves and their temperature dependence, of the tunnel thin MIS diodes strongly reflect the characteristics of the Schottky diodes, although the insulating layers suppress the currents, depending upon their I-layers thickness.

Fabrication of GaAs MISFET with nm-thin oxidized layer formed by UV and ozone process

“…The alternative gate structure is the metal-insulator-semiconductor (MIS) to reduce the gate leakage current and to overcome the SCE [3], [4]. The advantages of the MIS gate structure are as follows: 1) high-speed operation due to downsizing the device more and more; 2) possibility of single power supply due to enhancement mode operation; 3) possibility of complementary device structure; 4) improvement of thermal property and breakdown voltage.…”

Relaxation Behavior of Microbubbles in Ultrasonic Field

“…8. The reverse current of the short-time oxidized sample is large and the currentvoltage characteristics look like that of an ohmic contact due to the high doping concentration (3 Â 10 18 /cc) of the epitaxial layer as theoretically demonstrated by Sugimura et al 8) But the leakage current is suppressed by the long oxidation. The current suppression vs oxide layer thickness is shown in Fig.…”

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

“…However, due to the large electron affinity of most metal oxide semiconductors only a small Schottky barrier is possible 310 , although Chasin et al have successfully demonstrated Schottky diodes using a-IGZO with a Pd contact 368 , as has Zhang et al with an Al contact 369 . Additionally, metal-insulator-semiconductor (MIS) 370 , Metal-insulator-metal (MIM) 371 and self-switching diodes (SSD) [372][373][374] have been demonstrated, but each has limitations that currently restrict them to academic interest rather than practical application. The most efficient and most common arrangement for rectifying circuitry is the bridge rectifier shown in figure 17.…”