I/V anomality and device performance of submicrometre-gate Ga0.47In0.53As/Al0.48In0.52As HEMT

Observation of the anomalous current–voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure

“…[8][9][10] The NDR of these devices is found in the small drain-to-source voltage ͑V DS ͒ regime, e.g., V DS Ͻ1.5 V, and is explained by the electron heating 5 or electron trapping effect. 6,7 However, the NDR behavior of our studied devices is presented in the higher V DS region than the reported devices. [5][6][7] Moreover, the NDR performance is formed even in the negative gate-to-source voltage ͑V GS ͒ regime.…”

“…6,7 However, the NDR behavior of our studied devices is presented in the higher V DS region than the reported devices. [5][6][7] Moreover, the NDR performance is formed even in the negative gate-to-source voltage ͑V GS ͒ regime. Therefore, we think that the interesting NDR phenomenon is associated with the real-space transfer an electron trapping effect.…”

Gunn oscillations in planar heterostructure diodes

“…Other authors have at various times commented on the possibility of Gunn instabilities forming in FET and HEMT structures [13,14], though this idea has not become established and can still inspire lively debate at conferences. Furthermore, recently a number of papers [15,16] have concluded that the well-known 'kink effect' in HEMTs [17] could be explained by the presence of Gunn domains, these causing a sudden drop in the drain current at certain points in the current-voltage (I-V) characteristics. Nevertheless, the development of planar Gunn diode technology appears to have been generally overlooked in favour of its more established vertical equivalent.…”