<i>The Growth of Crystals from Liquids</i>

Brice, J.C.; Laudise, R.A.

doi:10.1063/1.3128545

Cited by 107 publications

(64 citation statements)

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“…The direct proportionality between the advance rates of the individual steps and the SI may be expressed by the lateral growth law using Brice's model, which states that an energy barrier (∆GI) is required to transfer an atom from the growth phase to the crystal, and moving the first growth-phase atom into the crystal is exactly equivalent to moving one step on the growth face [36,37]:…”

Section: Advance and Retreat Behavior Of The Stepsmentioning

confidence: 99%

In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

Kuwahara

Makio

et al. 2016

Minerals

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Abstract:The growth behavior and kinetics of the barite (001) surface in supersaturated BaSO 4 solutions (supersaturation index (SI) = 1.1-4.1) at 30 • C were investigated using in situ atomic force microscopy (AFM). At the lowest supersaturation, the growth behavior was mainly the advancement of the initial step edges and filling in of the etch pits formed in the water before the BaSO 4 solution was injected. For solutions with higher supersaturation, the growth behavior was characterized by the advance of the and [010] half-layer steps with two different advance rates and the formation of growth spirals with a rhombic to bow-shaped form and sector-shaped two-dimensional (2D) nuclei. The advance rates of the initial steps and the two steps of 2D nuclei were proportional to the SI. In contrast, the advance rates of the parallel steps with extremely short step spacing on growth spirals were proportional to SI 2 , indicating that the lateral growth rates of growth spirals were directly proportional to the step separations. This dependence of the advance rate of every step on the growth spirals on the step separations predicts that the growth rates along the [001] direction of the growth spirals were proportional to SI 2 for lower supersaturations and to SI for higher supersaturations. The nucleation and growth rates of the 2D nuclei increased sharply for higher supersaturations using exponential functions. Using these kinetic equations, we predicted a critical supersaturation (SI ≈ 4.3) at which the main growth mechanism of the (001) face would change from a spiral growth to a 2D nucleation growth mechanism: therefore, the morphology of bulk crystals would change.

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Section: Advance and Retreat Behavior Of The Stepsmentioning

confidence: 99%

In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

Kuwahara

Makio

et al. 2016

Minerals

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“…The essential idea for predicting morphology from the attachment energy is that growth rate is roughly proportional to the attachment energy. Visualization of the morphology is based on Wulff's theorem (Brice, 1973), as implemented in the software SHAPE (Dowty & Richards, 1994). Fig.…”

Section: Computationsmentioning

confidence: 99%

Crystal morphology prediction and morphology variation in NaIO₄ and NaIO₄.3H₂O

Soltzberg

Madden

1999

Acta Crystallogr Sect B

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Attachment energies computed with only Coulomb potentials have been utilized to predict crystal morphologies for NaIO 4 , sodium iodate, and the hydrate NaIO 4 .3H 2 O, sodium iodate trihydrate [actually Na(H 3 O)(IO 3 )(OH) 3 ]. As with other previously studied water-soluble ionic compounds, these two systems exhibit a systematic relationship between the early growth morphology and that of mature crystals; this relationship can in each case be reproduced by adjusting one attachment energy value. Morphology prediction for these two substances is of particular interest because NaIO 4 .3H 2 O is a polar crystal and involves extensive hydrogen bonding, and because obtaining the observed morphology for NaIO 4 involved consideration of solvent desorption at the growing faces.

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“…Many techniques have been developed to growth single crystalline samples, and can be roughly classified into three groups: growth from the melt, growth from a vapor phase and growth from solution [Brice, 1973[Brice, , 1986Pamplin, 1975]. Growth from the melt, including Czochralski, Bridgman and skull-melting methods, can be used to grow large single crystals, such as sapphire and silicon used for computer chips.…”

Section: Crystal Growthmentioning

confidence: 99%

Development and exploration of potential routes of discovery of new superconductors

Lin

2013

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The Growth of Crystals from Liquids

Cited by 107 publications

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In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

Crystal morphology prediction and morphology variation in NaIO₄ and NaIO₄.3H₂O

Development and exploration of potential routes of discovery of new superconductors

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The Growth of Crystals from Liquids

Cited by 107 publications

References 0 publications

In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO4 Solutions at 30 °C

Crystal morphology prediction and morphology variation in NaIO4 and NaIO4.3H2O

Development and exploration of potential routes of discovery of new superconductors

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Product

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Crystal morphology prediction and morphology variation in NaIO₄ and NaIO₄.3H₂O