P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

Chien, Jui-Fen; Shih, Huan-Yu; Liao, Hua‐Fang; Lin, Ray-Ming; Shyue, Jing‐Jong; Chen, Miin-Jang

doi:10.1149/2.030311jss

Cited by 5 publications

(3 citation statements)

References 41 publications

(52 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, as the intrinsic donor states (i.e., oxygen vacancies) decrease, the P(II) intensity of the p-type AlN-doped SnO 2 thin film decreases and is even smaller than that of the undoped SnO 2 thin film. 29 2c, all the undoped SnO 2 and the low Al-doping concentration Al-doped SnO 2 (Al content between 6.7% and 13%) thin films show the typical n-type conduction. Figure 2a plots the carrier concentration of the Al-doped SnO 2 thin films against the annealing temperature.…”

Section: ■ Results and Discussionmentioning

confidence: 97%

“…We believe that the decrease of the oxygen vacancy concentration is caused by the N 3– –O 2– substitution reaction. Thus, as the intrinsic donor states (i.e., oxygen vacancies) decrease, the P(II) intensity of the p-type AlN-doped SnO 2 thin film decreases and is even smaller than that of the undoped SnO 2 thin film . Sun et al computed the density of states (DOS) of the substitution N in the N-doped SnO 2 .…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

et al. 2016

View full text Add to dashboard Cite

In this study, the Al3+–Sn4+ substitution reaction in the AlN-doped SnO2 thin films is confirmed by photoluminescence and X-ray photoelectron spectrum analysis. Also, both Al3+–Sn4+ and N3––O2– substitution reactions are verified by computational simulation, Vienna ab initio simulation package (VASP). The computational simulation shows that both Al and N impurity dopants generate an unoccupied band at the upper valence band maximum, which produces holes within the upper valence band region. Both Al3+–Sn4+ and N3––O2– substitution reactions contribute to the p-type conversion of AlN-doped SnO2 thin films. Annealing AlN-doped SnO2 (Al content is 14.65%) thin films at high-temperature (larger than 350 °C), N outgassing would occur and cause the p-type conduction of the annealed AlN-doped SnO2 thin films back to n-type conduction. Yet, in this work, we found that the Al3+–Sn4+ substitution reaction in the high Al-doping concentration of Al-doped and AlN-doped SnO2 (the Al content is between 29% and 33.2%) thin films would be activated considerably, as they are annealed at a temperature over 500 °C. With a higher Al-doping concentration (Al concentration is 33.2%) in the Al-doped SnO2 thin films, we found that the critical annealing temperature for the n-to-p conduction transition decreases to 500 °C. The Al dopants in the AlN-doped SnO2 thin films annealed at high annealing temperature not only stabilize the N3––O2– substitution reactions but also produce hole carriers by the Al3+–Sn4+ substitution reactions. The Al3+–Sn4+ substitution makes the AlN-doped SnO2 retain the p-type conduction in the high-temperature annealing.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

et al. 2016

View full text Add to dashboard Cite

show abstract

“…In order to exploit these optical devices, one of the critical issues is to achieve stable and reproducible p-type Zn 1-x Mg x O. Unfortunately, compared with ZnO, there are only a few reports on p-type Zn 1-x Mg x O [10][11][12][13][14]. They have reported obtaining p-type Zn 1-x Mg x O by single doping of I or V group elements, such as Li, N, P, Sb etc., and by codoping of III-V groups, such as Al-N etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of Nitrogen Flux on the Properties of N-Doped Zn1-xMgxO Thin Films

Liu

Chen

et al. 2017

MSF

View full text Add to dashboard Cite

Different Mg content in Zn1-xMgxO was also obtained by varying N2 flux. UV emission peak in photoluminescence (PL) spectra shift from 350 nm to 360 nm, and then to 352 nm, which is consistent with the result of absorption spectra of the Zn1-xMgxO:N films grown at different N2 flux. The emission intensity of the Zn1-xMgxO:N band edge peak was drastically reduced with increasing N2 flux, which was attributed to the concentration of nonradiative recombination centers increased with increasing N2 flux. The carrier concentration of N-doped Zn1-xMgxO increased with increasing N2 flux below 0.8 sccm, while those above 0.8 sccm decreased. The p-type Zn1-xMgxO:N with the maximum hole concentration 3.97×1017 cm-3 was obtained by optimizing growth conditions.

show abstract

Synthesis and characterization of urea-doped MgZnO nanoparticles for electronic applications

Badi

Khasim

Pasha³

2019

Appl. Phys. A

View full text Add to dashboard Cite

P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

Cited by 5 publications

References 41 publications

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

Experimental Observation and Computer Simulation of Al/Sn Substitution in p-Type Aluminum Nitride-Doped Tin Oxide Thin Film

Effect of Nitrogen Flux on the Properties of N-Doped Zn<sub>1-x</sub>Mg<sub>x</sub>O Thin Films

Synthesis and characterization of urea-doped MgZnO nanoparticles for electronic applications

Contact Info

Product

Resources

About