N-type zinc phosphide grown by molecular beam epitaxy

Abstract

We report on the results of Hall effect and photoluminescence (PL) in n-type Zn3P2 grown by molecular beam epitaxy. The Zn3P2 thin films indicated n-type conductivity instead of the usual p-type conductivity due to a strong self-compensation effect with Hall mobility and carrier concentration of 3–7×103 cm2/Vs and 3–9×1010 cm−3 at room temperature, respectively. Donor levels of 0.01 and 0.73 eV from the conduction band were identified by resistivity and Hall effect measurements. The PL spectra show donor-acceptor pair emission near 1.41 eV at 20 K ascribed to an acceptor level of 0.26 eV from the valence band.

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Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide

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“…This is the key to control the density of self-interstitials, which readily form due to the high number of large vacant sites in the zinc sublattice, and thus the degree of intrinsic doping due to deviations from stoichiometry. 30 In principle, the precise flux control in MBE should also enable the controlled incorporation of extrinsic dopants such as Ag, Mg and In. 13,14,[33][34][35] Previously, in addition to thin films and bulk crystals, Zn 3 P 2 has been obtained in the form of randomly oriented nanowires, nanoribbons, and nanotrumpets.…”