<i>m</i> ‐plane GaN/InGaN/AlInN on LiAlO<sub>2</sub> grown by MOVPE

Behmenburg, H.; Wen, Ten‐Chin; Dikme, Y.; Mauder, C.; Khoshroo, L. Rahimzadeh; Chou, Ming-Shean; Rzheutskii, M. V.; Луценко, Е. В.; Yablonskii, G. P.; Woitok, J.; Kalisch, H.; Jansen, R.H.; Heuken, M.

doi:10.1002/pssb.200778565

Cited by 4 publications

(2 citation statements)

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“…Doping with Mg is helpful because oxygen can be prevented from diffusing into the active layer. In a previous report, AlInN layer was used as the next interlayer [12]. Here, a 160 nm low-temperature GaN interlayer and 500 nm high-temperature GaN:Si layer, grown under H 2 atmosphere, complete the buffer structure.…”

Section: Methodsmentioning

confidence: 99%

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Hang

Chou

Chang

et al. 2009

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Hang

Chou

Chang

et al. 2009

Journal of Crystal Growth

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“…This leads to better overlapping electron and hole wave functions and in potentially higher emission efficiency and more stable emission wavelength at excitation level alteration [1][2][3] in the active region of optoelectronic devices. Growth on (100) LiAlO 2 substrates enables deposition of nonpolar m-plane GaN-based heterostructures with a small substrate-lattice mismatch by metal organic vapor phase epitaxy (MOVPE).…”

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confidence: 96%

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂

Луценко

Rzheutski

Pavlovskii

et al. 2012

Phys. Status Solidi C

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Polarized photoluminescence (PL) of a series of m ‐plane InGaN/GaN multiple quantum well heterostructures (xIn = 5‐30%) was measured in a wide temperature range (T = 10‐580 K). A pronounced S‐shape behaviour of PL band position was observed for all samples which is an evidence of a high degree of localization of photogenerated carriers. From temperature dependences of the PL degree of polarization, the energy difference between the two highest valence subbands ΔE in InGaN was estimated to be increasing from ∼70 meV to ∼160 meV with rising indium content from 5% to 30%. The high‐temperature spectral difference between the polarized PL components was substantially lower than ΔE which is caused by imperfect polarization of optical transitions to different valence subbands. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

Mauder

Khoshroo

Behmenburg

et al. 2008

Journal of Crystal Growth

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We deposited pure m-plane GaN (1-100) layers on LiAlO 2 (100) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing layers are grown under nitrogen ambient and help to improve the film coalescence while reducing the oxygen background doping of the GaN films. We show that for an increasing thickness of the InGaN:Mg buffer layer, the highly strained GaN layer slightly relaxes. An improved surface morphology can be achieved for thicker InGaN:Mg buffers while the defect density clearly increases above a certain thickness as it can be seen in X-ray rocking curve measurements. In temperature-dependent photoluminescence spectroscopy, we observe not only peaks due to DAP transitions at an energy of around 3.3 eV, but also a defect related peak at 3.43 eV as well as a peak at 3.49 eV connected to free and bound excitonic transitions. It is interesting to note that for an increasing thickness of the InGaN:Mg buffer, we detect a higher intensity of the excitonic transition while the defect-related signal seen at 3.43 eV is getting more pronounced. It might be possible that during the film relaxation, basal plane stacking faults are introduced into the layer. IntroductionThe increasing demand for highly efficient nitride blue and green light emitting diodes (LEDs) has attracted great interest for the growth of nonpolar GaN. In contrast to the common growth of nitride material in the polar c-axis, the absence of polarization-induced electric fields in the growth direction for nonpolar structures leads to a better overlap of electron and hole wave functions in quantum wells and therefore to a more efficient carrier recombination [1]. As a second advantage, nonpolar light emitters exhibit a much lower wavelength shift with higher driving currents due to the absence of polarization field screening normally occurring in c-plane GaN [2]. One interesting approach to achieve this is to grow on (100) LiAlO 2 substrates, which enables a deposition of GaN in m-plane orientation with a rather small substrate-lattice mismatch of only 1.7 % and 0.3 % in [11][12][13][14][15][16][17][18][19][20] and [0001] direction of GaN, respectively [3]. The substrates can be manufactured by conventional Czochralski pulling method which allows potentially cheap large-size wafer production. One of the challenges with this material is the sensitivity to hydrogen and water. On the other hand, this offers a possibility of an easy substrate removal after device processing for an improved light extraction and heat management. In first literature reports, mainly molecular beam epitaxy (MBE) was used to deposit pure m-plane GaN on LiAlO 2 [1,3,4] but also successful growth by hydride vapor phase epitaxy (HVPE) has been reported [5]. The challenges with the growth by metal organic vapor phase epitaxy (MOVPE) on this substrate are related to the demand for high growth temperatures and hydrogen ambient to achieve high-quality material, both of which can cause serious substrate damage. Nevertheless, several groups succeeded in...

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m ‐plane GaN/InGaN/AlInN on LiAlO₂ grown by MOVPE

Cited by 4 publications

References 11 publications

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂

Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

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m ‐plane GaN/InGaN/AlInN on LiAlO2 grown by MOVPE

Cited by 4 publications

References 11 publications

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO2

Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates

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m ‐plane GaN/InGaN/AlInN on LiAlO₂ grown by MOVPE

Temperature‐resolved photoluminescence of nonpolar InGaN/GaN multiple quantum well heterostructures grown on LiAlO₂