Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE

MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on γ-LiAlO2 substrates

“…This is in contrast with periodic trench-like pattern [21] and ''slate''-like morphology [7,13]. To our knowledge, this is the first report of this kind of surface morphology for m-plane GaN-based epilayers on LiAlO 2 .…”

“…The nitridation time is 2 min. This leads to a thin AlN layer oriented in the m-plane, which serves to guide the subsequent layer growth [12,13]. The second important step is the deposition of Mg-doped InGaN layer under N 2 atmosphere to prevent decomposition and H 2 etching of LiAlO 2 at high temperatures [15].…”

“…Recently, g-LiAlO 2 as an alternative substrate for GaN epitaxial growth has received a lot of attention [7][8][9][10][11][12][13]. LiAlO 2 crystal possesses a tetragonal structure with crystallographic P4 1 2 1 2 symmetry.…”

Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (100) by MOVPE

“…Basic structural characterization using high-resolution X-ray diffraction (XRD) has been performed [12]. The XRD result shows diffraction peak from the GaN (1 0 1 0) and no peak due to c-plane GaN is observed, indicating that the GaN is indeed oriented in the m-plane.…”

Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

“…In spite of several advantages of nonpolar structure, the growth of the nonpolar structure is more difficult than that of the polar structure due to high Ga-polar to N-polar wing growth rate ratio 2 . In order to produce high quality films suitable for growing quantum wells, defect reduction and surface roughening techniques have been extensively researched [3][4][5][6][7] . Some groups used low lattice-mismatched substrates such as nonpolar GaN bulk [3][4] or LiAlO 2 substrates [5][6] .…”