In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN

Abstract

X-ray photoelectron ͑XPS͒, ultraviolet photoelectron ͑UPS͒, and Auger electron spectroscopy ͑AES͒ spectra are presented from epitaxial, single-crystal transition-metal ͑TM͒ nitride ͑ScN, TiN, VN, and CrN͒ layers, that were grown in situ in an ultrahigh-vacuum ͑UHV͒ magnetron sputter deposition system attached to the analysis chambers. The samples are near-stoichiometric with N/Me ratios determined by Rutherford backscattering spectroscopy ͑RBS͒, and contain no bulk or surface impurities detectable by XPS, AES, or RBS. The spectra therefore represent reliable reference data. We also present XPS and AES data from sputter-etched samples in order to quantitatively determine the effect of preferential sputtering of nitrogen in TM nitrides. The sputter etching was performed under conditions typical for sputter cleaning of air-exposed samples until a steady state N/Me ratio is reached.

The growth of epitaxial VN(111) nanolayer surfaces

“…1b) is observed at 397.3 eV. The V 2p and N 1s core level binding energies are well within the range of binding energies reported for vanadium nitride in the literature [14,15] and thus specify the chemical identity of the overlayers to VN. The presence of the satellite structure at $516 eV, which has been ascribed to ''poorly screened'' core hole states [16], is typical for VN [17] and indicates that the VN formed is nearly stoichiometric [18].…”

Influence of film thickness and Ar N2 plasma gas on the structure and performance of sputtered vanadium nitride coatings

“…5b) and gives a supplementary evidence supporting N element bonded to V during the coating deposition [6]. However, regarding the spectra of the film deposited for 120 min (900 nm), the N1 s was shifted to a higher binding energy (397.2 eV) compared to the VN reference [35]. The components observed would be related to the V 2 N by the formation of VeN bonds.…”

Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1−xTaxBy thin films

“…The expected values of the B/(Zr+Ta) ratio y due to increasing the Ta flux, starting with the reference DCMS sample composition ZrB2.4, are 2.16,1.96, and 1.80 for the three HiPIMS powers used; however, the measured y values are 2.1, 1.8, and 1.5, respectively. We attribute the differences to preferential sputtering of light B atoms 105. Ta ions incident at the growing films during HiPIMS pulses are much heavier than the majority film constituents (mTa = 180.9 amu, mZr = 91.2 amu, and mB = 10.8 amu).…”