The growth of epitaxial VN(111) nanolayer surfaces

Photocatalytic activities of N-doped nano-titanias and titanium nitride

“…in N-doped titania, cubic nitride, or some other N-species. 63 N 1s peaks were observed at a binding energy of 399.7 ± 0.2 eV for samples nitrided at or below 700 • C. Typically such binding energies are characteristic of NH x and atomic ␥-N and such species would be conceivable here due to possible adsorption of residual ammonia. However, closer inspection of the literature indicates interstitial nitrogen, or M-N-O bonds (where M = Si or Ni) in the binding energy range 399.5-399.9 eV.…”

Design of hard surfaces with metal (Hf/V) nitride multinanolayers

“…The change of binding energy compared to VN verifies the formation of binary V-N compounds. Therefore, calculating the peak area yields an atomic ratio of V : N = 1.1 : 0.9, similar to the stoichiometry of V 1.2 N 0.8 [12].…”

“…According to the XPS literature, regarding HfN and VN materials [11,12], when the peaks are fitted from experimental results, it is necessary first to adjust the N energy band because it is the element that provides greater reliability for XPS; then, taking this first adjustment as base, the other peaks related to the remaining elements are adjusted. The latter is indispensable due to the characteristic present in these kinds of insulating materials (coatings) with respect to the incident signal; thus, avoiding the uncertainties caused by charging and shifts of the Fermi energy.…”

Heterostructures design for Hf-Nitride/V-Nitride system

“…2b) the peaks at 630.4, 532.0, 516.8, and 397.6 eV correspond to V 2s, O 1s, V2p3/2, and N 1s, binding energies, respectively. The change of binding energy compared to VN verifies the formation of a binary V-N compound; therefore, calculating the peak area yields an atomic ratio of V: N¼ 1.1:0.9, similar to the stoichiometry of V 1.2 N 0.8 [19].…”