In situx-ray photoelectron spectroscopy for thin film synthesis monitoring

Abstract

Articles you may be interested inCharacterization of TiAlN thin film annealed under O 2 by in situ time of flight direct recoil spectroscopy/mass spectroscopy of recoiled ions and ex situ x-ray photoelectron spectroscopy J. Vac. Sci. Technol. A 20, 1320 (2002); 10.1116/1.1482711 X-ray photoelectron spectroscopic characterization of the adhesion behavior of chemical vapor deposited copper films J.Tungsten silicide composition analysis by Rutherford backscattering spectroscopy, Auger electron spectroscopy, and x-ray photoelectron spectroscopyWe describe an x-ray photoelectron spectroscopy spectrometer capable of determining the composition, thickness, and chemistry of thin film surfaces during growth. The instrument operates at pressures up to a few millitorr, an adequate range for many sputtering, low pressure chemical vapor deposition and thermal evaporation processes. Using a conventional x-ray source, spectra of individual elements can be rapidly accumulated in 10-30 s. To illustrate its capabilities, we present two examples of measurements made with the spectrometer. The low pressure chemical vapor deposition growth of a WO 3 film on Si in a 1 mTorr O 2 environment, and the thermal oxidation of Si in a 2ϫ10 Ϫ4 torr O 2 environment. We believe these represent the first measurements of such processes in real time by electron spectroscopy. We also describe the spectrometer construction and capabilities in some detail, contemplated improvements in its performance, and anticipated applications.

Ambient pressure photoelectron spectroscopy: A new tool for surface science and nanotechnology

“…was carried further and a new dedicated [17] high pressure instrument was built and used for thin film processing including reactive sputtering and chemical vapor deposition.…”

A combined droplet train and ambient pressure photoemission spectrometer for the investigation of liquid/vapor interfaces

“…This approach has been used, beginning with Hans Siegbahn and coworkers early designs in the 1970's 10,11,12 , in all ambient pressure XPS instruments that have been designed to date. 13,14,15,16,17,18,19,20,21 A similar approach has been taken in the application of meta-stable impact electron spectroscopy (MIES) 22,23 for the study of surfaces, including liquids, at elevated pressures. 24 In addition to the scattering of electrons by gas molecules, there are other obstacles to overcome in ambient pressure XPS instruments, namely that the X-ray source (synchrotron or anode) and the electron analyzer have to be kept under UHV.…”

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

“…5 To avoid possible charging of the sample surface during XPS measurements, the sample holder ͑a 4 inch Si wafer͒ was coated with Au. An exposed area of the Au coating, i.e., the area that was not covered by an In 0.53 Ga 0.47 As sample, was also used for calibarting XPS binding energies.…”