<i>In situ</i> substrate surface cleaning by low-energy ion bombardment for high quality thin film formation

Aoki, Yuki; Aoyama, Satoshi; Uetake, Hiroaki; Morizuka, K.; Ohmi, Tadahiro

doi:10.1116/1.578730

Cited by 20 publications

(13 citation statements)

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“…A schematic of the dual rf excitation plasma processing equipment 12,13,[27][28][29] used in the present work is illustrated in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

“…Low energy (Ͻ100 eV͒ ion beam irradiation during film deposition is an effective method used to modify the grown film properties of various materials [5][6][7][8][9][10][11][12][13][14][15][16] without introducing defects in the substrate as well as in grown films. Over the past few decades, a considerable number of studies [16][17][18][19][20][21][22][23][24] have also been made on the Ta thin film deposition to clarify the relationship between the Ta film properties and deposition parameters such as gas pressures, rf powers, substrate temperatures as well as substrate bias voltages ͑ion energies͒.…”

Section: Introductionmentioning

confidence: 99%

“…The purpose of this article is to present the effects of ion energy, ion flux, and ion species on the crystallographic and electrical properties of sputter-deposited Ta thin films by use of dual rf excitation plasma process equipment, 12,13,[27][28][29] which can independently control three principal parameters in the sputtering film deposition process: the ion bombardment energy, the ion flux density, and the film growth rate. The effect of the substrate materials is also described.…”

Section: Introductionmentioning

confidence: 99%

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Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films

Ino

Shinohara

Ushiki

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Effect of arc suppression on the physical properties of low temperature dc magnetron sputtered tantalum thin films J.The effects of ion bombardment conditions on the crystallographic and electrical properties of tantalum thin films grown on SiO 2 and Si have been systematically investigated in Ta thin film formation process employing low-energy (Ͻ100 eV͒ inert-gas ion bombardment on a growing film surface. It is demonstrated that the properties of Ta films are strongly dependent upon ion energy and ion flux as well as substrate materials. The bcc-Ta can be formed on SiO 2 by controlling impinging ion energy and normalized ion flux defined as the ratio of ion flux to Ta flux ranging lower than 20 eV and higher than 13, respectively, for Ar plasma. Based on these results, low-resistivity bcc-Ta thin films ͑14.8 ⍀ cm at 300 K͒ have been successfully formed. It is also experimentally shown that the irradiation by ions with different mass numbers has different effects on growing film properties, even if the energy or momentum of the ions is the same. When normalized ion flux is 26, bcc-Ta films can be grown on Si at ion energy lower than 30 eV for Ar ions and at ion energy ranging from 30 to 90 eV for Xe ions. The results also suggest that there are two cases where the phase transition from bcc to ␤ occurs. One is caused by defects induced by the recoil implantation of Ta atoms due to the excessive higher-energy ion bombardment and the other is induced by defects due to insufficient total energy input to a growing film surface by ion irradiation and resulting poor film quality.

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“…A schematic of the dual rf excitation plasma processing equipment 12,13,[27][28][29] used in the present work is illustrated in Fig. 1.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films

Ino

Shinohara

Ushiki

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…This mixture is of interest because of its use in plasma cleaning processes of silicon surfaces [41]. In contrast to other gases, the ion flux in this mixture was not dominated by a single ion.…”

Section: Review Of Previous Ied Investigations On the Gec Cellmentioning

confidence: 99%

Studies of Ion Kinetic-Energy Distributions in the Gaseous Electronics Conference Rf Reference Cell

Olthoff¹,

Brunt²,

Radovanov³

1995

J. Res. Natl. Inst. Stand. Technol.

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A review is presented of kinetic-energy distribution measurements for ions striking grounded surfaces in a Gaseous Electronics Conference (GEC) rf Reference Cell. Two experimental arrangements that have been used to measure ion energies in the GEC Cell are described, and a comparison of their performance under different operating conditions is presented. Significant results from ion-energy analysis in the Reference Cell are highlighted, including evidence of effects due to surface conditions on ion sampling, verification of electrical behavior of the cell, inferences about ion-molecule reactions indicated by the shapes of measured ion kinetic-energy distributions (IEDs), and the use of measured IEDs for the validation of theoretical models. The paper concludes with a detailed study of IEDs measured for rf plasmas generated in mixtures of argon and oxygen, using both experimental arrangements.

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“…Hydrogen plasmas are widely used in the field of material treatments. For example, pure hydrogen plasmas are used in microelectronics for surface cleaning or etching of compound semiconductors [1][2][3]. Commonly, low-pressure (p < 10 −2 Torr) microwave ECR plasmas are used in this application.…”

Section: Introductionmentioning

confidence: 99%

Modelling the discharge region of a microwave generated hydrogen plasma

Chen

Wei

Collins

et al. 1999

J. Phys. D: Appl. Phys.

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A zero-dimensional steady-state model of low-pressure (2-60 Torr) microwave-generated hydrogen plasmas was developed. The electron energy distribution function (EEDF) was determined using the Boltzmann equation, coupled to species, energy and power balances. The EEDF from the Boltzmann equation permitted computation of the rate constants and average electron temperature required for simultaneous solution to the six species balances, two for neutrals (H, H 2 ) and four for charged (H + , H + 2 , H + 3 and electron) species, and the energy balance. The average electron temperature and species concentrations were then employed in a power balance to check for self-consistency with the input power used to solve the Boltzmann equation. E/N values were appropriately adjusted after each iteration until self-consistency was achieved. The model provides information on the details of the transfer of power from electrons via various processes (ionization, dissociation, vibration, rotation) to the neutral species. The mechanism of energy loss from the neutrals (radiation, convection) is also computed, and thus gas temperature can be estimated. Indeed, for low-pressure (p < 15 Torr) plasmas the model yields accurate absolute gas temperatures as a function of pressure, including the fact that gas temperature rises steeply at pressures in excess of 15 Torr. This results from the fact that at low pressures a very large fraction of the input power is transmitted by the electrons to the molecular vibration modes, such that T vib T trans .

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In situ substrate surface cleaning by low-energy ion bombardment for high quality thin film formation

Cited by 20 publications

References 0 publications

Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films

Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films

Studies of Ion Kinetic-Energy Distributions in the Gaseous Electronics Conference Rf Reference Cell

Modelling the discharge region of a microwave generated hydrogen plasma

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