In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)

Abstract

The interfacial chemistry of thin Al ($3 nm) and Hf ($2 nm) metal films deposited by electron beam (e-beam) evaporation on native oxide InP (100) samples at room temperature and after annealing has been studied by in situ angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The In-oxides are completely scavenged forming In-In/In-(Al/Hf) bonding after Al and Hf metal deposition. The P-oxide concentration is significantly decreased, and the P-oxide chemical states have been changed to more P-rich oxides upon metal deposition. Indium diffusion through these metals before and after annealing at 250 C has also been characterized. First principles calculation shows that In has lower surface formation energy compared with Al and Hf metals, which is consistent with the observed indium diffusion behavior. V C 2013 AIP Publishing LLC. [http://dx.

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

“…Similar oxidation mechanisms were described in earlier reports for the interaction of different metals with the InP substrate. 31 Narrow scan spectra of the In 3d 5/2 core level of the Ta 1Àx Zr x O/SiO 2 /InP sample are shown in Fig. 2(b).…”

Origin of Indium Diffusion in High-k Oxide HfO2

“…The channel material interface with the insulating gate oxide is most crucial in determining the electric performance of metal oxide semiconductor (MOS) based microelectronic devices. The traditional Si/oxide based gate stack is experiencing great challenges when the device downscales to ever-smaller dimensions, evidenced by severely poor reliability and high leakage current. , The III-V/high- k oxide has been regarded as one of the promising candidates in the next generation metal oxide semiconductor field effect transistors (MOSFET) due to its higher carrier mobility and higher breakdown electric field. − However, this specific interface structure is suffering from thermal stability, caused mainly by interfacial III-V elemental diffusion, , especially indium (In) diffusion in the postannealing process . The interfacial In diffusion could further cause interfacial gap states and charge traps in oxide, severely undermining device performance.…”

“…Experimentally, extensive studies about In diffusion have been reported. − Through low energy ion scattering spectroscopy (LEIS) and angle resolved X-ray photoelectron spectroscopy (ARXPS), Cabrera et al have found that In diffused through HfO 2 after postdeposition annealing (PDA) in HfO 2 /In 0.53 Ga 0.47 As stacks. Dong et al also observed In out-diffusion through high- k dielectric (Al 2 O 3 and HfO 2 ) films grown on InP(100) by atomic layer deposition (ALD) technique.…”

“…Experimentally, extensive studies about In diffusion have been reported. − Through low energy ion scattering spectroscopy (LEIS) and angle resolved X-ray photoelectron spectroscopy (ARXPS), Cabrera et al have found that In diffused through HfO 2 after postdeposition annealing (PDA) in HfO 2 /In 0.53 Ga 0.47 As stacks. Dong et al also observed In out-diffusion through high- k dielectric (Al 2 O 3 and HfO 2 ) films grown on InP(100) by atomic layer deposition (ALD) technique. Krylov et al reported that the In out-diffusion through the InGaAs/high- k oxide is correlated with the electronic performances of device.…”

“…1,2 The III-V/high-k oxide has been regarded as one of the promising candidates in the next generation metal oxide semiconductor field effect transistors (MOSFET) due to its higher carrier mobility and higher breakdown electric field. 2−5 However, this specific interface structure is suffering from thermal stability, caused mainly by interfacial III-V elemental diffusion, 6,7 especially indium (In) diffusion in the postannealing process. 8 The interfacial In diffusion could further cause interfacial gap states and charge traps in oxide, severely undermining device performance.…”