<i>In situ</i> spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

Volintiru, I.; Creatore, M.; Sanden, M.C.M. van de

doi:10.1063/1.2837109

Cited by 77 publications

(44 citation statements)

References 48 publications

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“…30 In the case of the ETP-grown layers, this effect resulted in a factor 50 decrease in resistivity within a thickness range of 70 -1300 nm and was related to the development of pyramid-like ZnO:Al grains. As inferred by means of near-IR (NIR) spectroscopic ellipsometry, 31 the relatively high in-grain quality was affected by the scattering losses at the grain boundaries present in the case of thin films, characterized by a small grain size (50-75 nm).…”

Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Ponomarev, M., Verheijen, M. A., Keuning, W., Sanden, van de, M. C. M., & Creatore, M. (2012). Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 112(4), 043708-1/7. [043708]. DOI: 10.1063/1.4747942 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO:Al layers by focusing on the control of the resistivity gradient and providing the solution towards thin ( 300 nm) ZnO:Al layers, exhibiting a resistivity value as low as 4 Â 10 À4 X cm. The approach chosen in this work is to enable the development of several ZnO:Al crystal orientations at the initial stages of the CVD-growth, which allow the formation of a densely packed structure exhibiting a grain size of 60-80 nm for a film thickness of 95 nm. By providing an insight into the growth of ZnO:Al layers, the present study allows exploring their application into several solar cell technologies. Highly conducting (doped) ZnO thin films are being used in diverse applications, such as light-emitting 1 and laser diodes, 2 architectural and automotive glazing, 3 thin-film transistors, 4,5 and high efficiency thin-film solar cells. 6 This latter makes use of ZnO as transparent conducting oxide (TCO), whe...

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Section: Introductionmentioning

confidence: 99%

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Ponomarev

Verheijen

Keuning

et al. 2012

Journal of Applied Physics

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“…This order of magnitude difference, allows this thin region to be treated as a thin film with a spatial average of ZnO and air permittivities, as described by the "effective medium approximation" or "50:50 model." [38][39][40][41][42] FDTD simulations were therefore completed with a 100 nm film in the hole using a 50/50 composition of the ZnO/air. The addition of this thin ZnO layer in the hole causes the relative transmission to decrease from 275% to 117%, which is within 10% of the measured data for 8 lm square holes.…”

Section: Resultsmentioning

confidence: 99%

Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

Nader

Vangala

Hendrickson

et al. 2015

Journal of Applied Physics

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Experimental results pertaining to plasmon resonance tunneling through a highly conductive zinc oxide (ZnO) layer with subwavelength hole-arrays is investigated in the mid-infrared regime. Gallium-doped ZnO layers are pulsed-laser deposited on a silicon wafer. The ZnO has metallic optical properties with a bulk plasma frequency of 214 THz, which is equivalent to a free space wavelength of 1.4 μm. Hole arrays with different periods and hole shapes are fabricated via a standard photolithography process. Resonant mode tunneling characteristics are experimentally studied for different incident angles and compared with surface plasmon theoretical calculations and finite-difference time-domain simulations. Transmission peaks, higher than the baseline predicted by diffraction theory, are observed in each of the samples at wavelengths that correspond to the excitation of surface plasmon modes.

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“…(3). This x s (x) would then be a summation of functions for the separate contributions x s ðxÞ ¼ x s;GB ðx; T GB ;s GB Þ þ x s;ii ðx; T ii ;s ii Þ þ x s0 : (12) Here, only the grain-boundary contribution x s,GB and the ionized-impurity contribution x s,ii are included as frequency-dependent contributions, although more could be added. x s0 is the contribution that does not depend on frequency.…”

Section: Drude Multiscalementioning

confidence: 99%

“…However, since the Drude oscillator theoretically relates to all electron scattering processes, a physical interpretation of why grain-boundary scattering is not observed at optical frequencies (while it is detected by means of electrical measurements, i.e., low frequencies or constant current) is to our knowledge lacking in the previous reports, where the effect is used but not explained. 7,8,[11][12][13][14] Furthermore, it is unclear what defines this frequency dependence or in which frequency range(s) it holds. Potentially, the Drude model would have to be adjusted to describe such a frequency dependence.…”

Section: Introductionmentioning

confidence: 99%

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Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

Knoops

Loo

Smit

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Knoops, H. C. M., Loo, van de, B. W. H., Smit, S., Ponomarev, M., Weber, J. W., Sharma, K., ... Creatore, M. (2015). Optical modeling of plasma-deposited ZnO films : electron scattering at different length scales. Journal of Vacuum Science and Technology. A: Vacuum, Surfaces, and Films, 33, 021509-1/13. DOI: 10.1116/1.4905086 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Articles you may be interested in Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk J. Appl. Phys. 117, 045304 (2015) In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means o...

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In situ spectroscopic ellipsometry growth studies on the Al-doped ZnO films deposited by remote plasma-enhanced metalorganic chemical vapor deposition

Cited by 77 publications

References 48 publications

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Controlling the resistivity gradient in aluminum-doped zinc oxide grown by plasma-enhanced chemical vapor deposition

Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films

Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

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