<i>In situ</i> observations of size effects in GaAs nanowire growth

Marnauza, Mikelis; Tornberg, Marcus; Mårtensson, Erik K.; Jacobsson, Daniel; Dick, Kimberly A.

doi:10.1039/d2nh00432a

Cited by 7 publications

(7 citation statements)

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“…By monitoring the growth and how it changes with the growth conditions, it is also easier to make rational decisions about how to adjust the growth conditions to achieve a specific result. Thus far, in situ studies of III–V nanowires have mostly focused on III–As and III–P nanowires (along with their ternary combinations), investigating aspects such as nanowire nucleation, droplet and nanowire composition during growth, crystal phase stability, and the layer-by-layer growth process. − …”

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confidence: 99%

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Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

Marnauza,

Sjökvist,

Lehmann

et al. 2023

J. Phys. Chem. Lett.

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confidence: 99%

“…Thus far, in situ studies of III–V nanowires have mostly focused on III–As and III–P nanowires (along with their ternary combinations), investigating aspects such as nanowire nucleation, droplet and nanowire composition during growth, crystal phase stability, and the layer-by-layer growth process. 24 − 29 …”

mentioning

confidence: 99%

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

Marnauza,

Sjökvist,

Lehmann

et al. 2023

J. Phys. Chem. Lett.

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“…Similar result was obtained in ref. [40], but the island was in contact with two corners of the NW top facet. The experimental data [14,27] show that the ZB phase formation at large droplet volumes is accompanied by the periodic dissolution of the growth facet edge.…”

Section: Discussionmentioning

confidence: 99%

Effects of the Growth Facet Shape of Self‐Catalyzed GaAs Nanowires on the Zinc‐Blende–Wurtzite Switching

Koryakin,

Guruleva

2024

Physica Status Solidi (b)

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Herein, the crystal phase switching between the cubic zinc‐blende and hexagonal wurtzite phases in self‐catalyzed GaAs nanowires (NWs) is theoretically studied, considering the dependence of the droplet contact angle on the position at the triple‐phase line. This dependence is calculated for the droplets resting on the NW top facet, which has the shape of truncated hexagon. The nucleation of c and h islands, corresponding to the cubic and hexagonal crystal phases, at the triple‐phase line and in the center of the catalyst–NW interface, is considered within the classical nucleation theory. As a result, the probability of h‐island nucleation as a function of the average contact angle is obtained. It is found that the maximum of this probability shifts to the region of large contact angles when the length of narrow edges of the NW top facet decreases. Also, it is shown that the GaAs island nucleation at the triple‐phase line occurs preferentially in the vicinity of the top facet corners.

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“…It is well documented that droplet-seeded VLS nanowires grow in the layer-by-layer mononuclear regime, in which each nanowire monolayer forms from a single nucleus or 2D island. The next nucleation event occurs only upon completion of the preceding monolayer, as confirmed by in situ studies of VLS GaAs nanowires in ETEM [ 112 , 113 ]. The nucleation-limited model describes the formation of a ternary III nucleus of a critical size, above which the island tends to grow at a given supersaturation of liquid.…”

Section: Liquid–solid Incorporation Modelsmentioning

confidence: 94%

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

Leshchenko

Dubrovskiı̆

2023

Nanomaterials

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Modeling of the growth process is required for the synthesis of III–V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III–V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III–V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid–solid incorporation mechanisms in vapor–liquid–solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor–solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III–V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III–V ternary nanowires and the remaining gaps that require further studies.

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In situ observations of size effects in GaAs nanowire growth

Abstract: Lateral dimensions of III-V nanowires are known to affect the growth dynamics and crystal structure. Investigations into size effects have in the past relied on theoretical models and post growth...

Cited by 7 publications

References 35 publications

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

Effects of the Growth Facet Shape of Self‐Catalyzed GaAs Nanowires on the Zinc‐Blende–Wurtzite Switching

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires

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