<i>In situ</i> nanoscale observation and control of electron-beam-induced cluster formation

Adelung, Rainer; Ernst, F.; Zheng, Nan; Landau, Uwe

doi:10.1116/1.1767830

Cited by 7 publications

(5 citation statements)

References 18 publications

(7 reference statements)

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“…The socalled electron-beam-induced deposition (EBID) involves decomposition of precursor materials in the gas, liquid, or solid phase. [29][30][31][32][33][34][35][36][37] A high-energy electron beam (10-300 keV) in SEM or transmission electron microscopy (TEM) is introduced into a low-pressure chamber through a microorifice or a membrane. This technique was also applied to modification of the electroplating surface.…”

Section: Resultsmentioning

confidence: 99%

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Suda¹,

Yagi²,

Kojima³

et al. 2015

Jpn. J. Appl. Phys.

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To enhance the usefulness of ballistic hot electron injection into solutions for depositing thin group-IV films, a dripping scheme is proposed. A very small amount of SiCl 4 or GeCl 4 solution was dripped onto the surface of a nanocrystalline Si (nc-Si) electron emitter, and then the emitter is driven without using any counter electrodes. It is shown that thin Si and Ge films are deposited onto the emitting surface. Spectroscopic surface and compositional analyses showed no extrinsic carbon contaminations in deposited thin films, in contrast to the results of a previous study using the dipping scheme. The availability of this technique for depositing thin SiGe films is also demonstrated using a mixture SiCl 4 +GeCl 4 solution. Ballistic hot electrons injected into solutions with appropriate kinetic energies promote preferential reduction of target ions with no by-products leading to nuclei formation for the thin film growth. Specific advantageous features of this clean, room-temperature, and power-effective process is discussed in comparison with the conventional dry and wet processes.

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Section: Resultsmentioning

confidence: 99%

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Suda¹,

Yagi²,

Kojima³

et al. 2015

Jpn. J. Appl. Phys.

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“…It is mainly used to deposit thin metal films (Schlesinger and Paunovic, 2010). Electron-beam-induced deposition (EBID), on the other hand, has been studied to form cluster, metal nanowires, thin films, and nanostructures (Kiyohara et al, 2002; Adelung et al, 2004; Gazzadi and Frabboni, 2005; van Dorp et al, 2005; Randolph et al, 2006; Frabboni et al, 2008; Furuya, 2008; van Dorp and Hagen, 2008; Botman et al, 2009; de Boer et al, 2011; Vollnhals et al, 2013; den Heijer et al, 2014; Leenheer et al, 2015). The focused electron beam with high-energies of 10–50 keV in the conventional scanning or transmission electron microscope is transmitted through membranes and then hits the absorbed gases or ionic liquids on the substrate leading to decomposition of molecules.…”

Section: Emissive Properties and Applicationsmentioning

confidence: 99%

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Koshida

Nakamura

2019

Front. Chem.

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Recent topics of application studies on porous silicon (PS) are reviewed here with a focus on the emissive properties of visible light, quasiballistic hot electrons, and acoustic wave. By exposing PS in solvents to pulse laser, size-controlled nc-Si dot colloids can be formed through fragmentation of the PS layer with a considerably higher yield than the conventional techniques such as laser ablation of bulk silicon and sol-gel precursor process. Fabricated colloidal samples show strong visible photoluminescence (~40% in quantum efficiency in the red band). This provides an energy- and cost-effective route for production of nc-Si quantum dots. A multiple-tunneling transport mode through nc-Si dot chain induces efficient quasiballistic hot electron emission from an nc-Si diode. Both the efficiency and the output electron energy dispersion are remarkably improved by using monolayer graphene as a surface electrode. Being a relatively low operating voltage device compatible with silicon planar fabrication process, the emitter is applicable to mask-less parallel lithography under an active matrix drive. It has been demonstrated that the integrated 100 × 100 emitter array is useful for multibeam lithography and that the selected emission pattern is delineated with little distortion. Highly reducing activity of emitted electrons is applicable to liquid-phase thin film deposition of metals (Cu) and semiconductors (Si, Ge, and SiGe). Due to an extremely low thermal conductivity and volumetric heat capacity of nc-Si layer, on the other hand, thermo-acoustic conversion is enhanced to a practical level. A temperature fluctuation produced at the surface of nc-Si layer is quickly transferred into air, and then an acoustic wave is emitted without any mechanical vibrations. The non-resonant and broad-band emissivity with low harmonic distortions makes it possible to use the emitter for generating audible sound under a full digital drive and reproducing complicated ultrasonic communication calls between mice.

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“…Electron-beam induced deposition, termed EBID, has been reported by several authors to form metal nanowires (12)(13)(14)(15)(16). However, the electron beam employed there is highenergy focused one used in the conventional scanning or transmission electron microscope.…”

Section: Ims Mapper Tuat and Tohoku Univ (This Work)mentioning

confidence: 99%

(Invited) Electronic and Acoustic Applications of Anodized Nano-Crystalline Silicon

Koshida¹

2015

ECS Trans.

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Anodized nano-crystalline silicon (nc-Si) layer is one of the self-organized Si nanostructures formed by electrochemical process. In addition to efficient luminescence, many specific effects are induced in nc-Si. For instance, the enhanced electron transport and the decreased thermal conduction lead to emission of ballistic electrons and acoustic wave, respectively. It is shown here that the ballistic electron emitter is useful for mask-less parallel lithography under an active-matrix drive mode. Also, injection of emitted energetic electrons into metal-salt solutions promotes reduction of positive ions and subsequent thin film deposition. On the other hand, the extremely lowered thermal conductivity and heat capacity of nc-Si layer enable efficient thermos-acoustic conversion at the surface. Being a broad-band flat ultrasound emission with no resonant peaks, the device can reproduce well the complicated acoustic communication calls between mice.

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In situ nanoscale observation and control of electron-beam-induced cluster formation

Cited by 7 publications

References 18 publications

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Deposition of thin Si and Ge films by ballistic hot electron reduction in a solution-dripping mode and its application to the growth of thin SiGe films

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

(Invited) Electronic and Acoustic Applications of Anodized Nano-Crystalline Silicon

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