<i>In situ</i> monitoring of GaAs etched with a Cl2/Ar discharge in an electron cyclotron resonance source

Kahaian, D. J.

doi:10.1116/1.588360

Cited by 8 publications

(1 citation statement)

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“…It has previously been shown that when etching III-V materials such as GaAs and InP, optical emission from the group III elements, Ga and In, is readily detected using OES, while the partial pressures of the group V related etch products, 145 AsCl 2 ϩ and 101 PCl 2 ϩ , are detected by MS. 7,12 The 145 AsCl 2 ϩ and 101 PCl 2 ϩ signals are proportional to the partial pressure of the chlorides formed in the ionizer of the PPT, and can be related to changes in the etch rates of GaAs and InP. Both OES and MS are able to monitor signals related to the etch gases.…”

Section: Resultsmentioning

confidence: 99%

Minimized response time of optical emission and mass spectrometric signals for optimized endpoint detection

Thomas

Chen

Hanish

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of etch-induced damage on the electrical characteristics of in-plane gated quantum wire transistors Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structuresThe response times of optical emission spectroscopy ͑OES͒ and mass spectrometry ͑MS͒ have been measured for plasma etching of III-V heterostructures. For the Ga optical emission signal at 417.2 nm, a response time as fast as 0.2 s was obtained. The minimum response time of the 145 AsCl 2 ϩ partial pressure, measured by MS, was found to be 0.9 s. The saturation times of the optical emission signal and the partial pressure signal have been shown to be related to the residence time of etch gases by varying the total gas flow rate and the chamber pressure. Decreasing residence time by reducing the pressure from 6 to 2 mTorr and maintaining a constant flow rate caused the saturation time of the Ga emission signal at 417.2 nm to decrease from 7 to 3 min. The 145 AsCl 2 ϩ partial pressure signal saturated before the Ga emission signal. Endpoint detection for etching an AlInAs emitter and stopping on a GaInAs base of a heterojunction bipolar transistor was studied. Algorithms which monitor the change in Ga emission intensity have been developed to automatically stop the emitter etch with ϳ2 nm of the GaInAs base layer removed. Additionally, etching of GaInAs on an InP substrate was studied and the signal from OES detected the endpoint before the MS signal did due to the faster response time.

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Section: Resultsmentioning

confidence: 99%