2009
DOI: 10.1063/1.3177330
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In situ investigation of oxygen precipitation in Czochralski-silicon by high energy x-ray diffraction

Abstract: The change in the diffracted intensity of a silicon 400 Bragg peak is measured in situ while the sample is exposed to a thermal treatment up to 1150 °C. The experiments are set up in focusing Laue geometry with polychromatic and divergent x-rays generated by a high voltage tube. Changes in peak intensity and shape are only observed for Czochralski grown samples and not for the float zone grown reference group. Thus, they are attributed to oxygen related defects emerging at these temperatures.

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Cited by 4 publications
(6 citation statements)
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“…With the data in Ref. 8 and 9 has been demonstrated, that oxygen precipitation can be monitored in situ with this laboratory setup.…”
Section: Introductionmentioning
confidence: 84%
“…With the data in Ref. 8 and 9 has been demonstrated, that oxygen precipitation can be monitored in situ with this laboratory setup.…”
Section: Introductionmentioning
confidence: 84%
“…The EIIs are measured during a defined thermal treatment shown in the upper panel of each figure. Data correction respects a thermal Debye-Wallerfactor as shown in [8] and changing peak positions. An altering peak position is caused by thermally induced movements of the furnace and thus the sample.…”
Section: Sfd Measurementsmentioning
confidence: 99%
“…that the intensity remains at an elevated level even after cooling to room temperature. From this, thermal strains are excluded as possible initiators of strain causing intensity enhancements and only BMDs are considered as dominating generators [8,9].…”
Section: Sfd Measurementsmentioning
confidence: 99%
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“…7 Figure 4 compares at 250, 350, and 450°C, a regime where it is usually assumed that oxygen mobility can be neglected for the build-up of strain. The data clearly show a variation of the oscillation period with temperature.…”
mentioning
confidence: 99%