In Situ Fabrication of Highly Conductive Metal Nanowire Networks with High Transmittance from Deep-Ultraviolet to Near-Infrared

Abstract

We have developed a facile and compatible method to in situ fabricate uniform metal nanowire networks on substrates. The as-fabricated metal nanowire networks show low sheet resistance and high transmittance (2.2 Ω sq(-1) at T = 91.1%), which is equivalent to that of the state-of-the-art metal nanowire networks. We demonstrated that the transmittance of the metal networks becomes homogeneous from deep-ultraviolet (200 nm) to near-infrared (2000 nm) when the size of the wire spacing increases to micrometer size. Theoretical and experimental analyses indicated that we can improve the conductivity of the metal networks as well as keep their transmittance by increasing the thickness of the metal films. We also carried out durability tests to demonstrate our as-fabricated metal networks having good flexibility and strong adhesion.

Ultra-Smooth, Fully Solution-Processed Large-Area Transparent Conducting Electrodes for Organic Devices

“…Metal micro- and nano-mesh electrodes have attracted considerable attention recently because the thickness, spacing, and line-widths of metal patterns can be easily modified to obtain desirable optical and electrical properties with the benefit of air-processable conditions. These metal meshes have been fabricated by various methods such as pattern-masked evaporation2021, nanoimprint lithography172223, inkjet24, flexographic25, transfer2627 and gravure-offset printing1228. However, these electrodes also suffer from high surface roughness, resulting in the possibility of electrical short-circuits between the TCEs and the top electrode.…”

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…The SiO 2 shell plays an important role in preventing the occurrence of bottleneck effects and subsequent fracture. Undoubtedly, this configuration would be beneficial for AgNW applications in which the NWs are subjected to a large bending strain …”

“…It started with rapid elastic straightening, followed by slow viscoelastic relaxation naturally approximated by an exponential fit: θ(t) = (1-θ e -θ 0 )exp[−t/τ] + θ 0 , where θ is the total normalized angle, θ e is the contribution of elastic restoration, θ 0 is the residual angle due to plastic deformation, and τ is the characteristic relaxation time ( Figure 11F). 146 The SiO 2 shell plays an important role in preventing the occurrence of bottleneck effects and subsequent fracture. Undoubtedly, this configuration would be beneficial for AgNW applications in which the NWs are subjected to a large bending strain.…”

“…Undoubtedly, this configuration would be beneficial for AgNW applications in which the NWs are subjected to a large bending strain. 146…”

Fabrication of Bendable Circuits on a Polydimethylsiloxane (PDMS) Surface by Inkjet Printing Semi-Wrapped Structures

“…Recently, printed electronics have attracted great attention in various device fabricating areas, such as liquid crystal displays, solar cells, organic light emitting diodes, electroluminescent devices and touch screen panels [1,2,3,4,5,6]. By virtue of its transparency, flexibility and good biocompatibility, polydimethylsiloxane (PDMS) has played an important role in patterning functional materials and fabricating devices, such as transfer printing, microfluidics and implantable medical devices [7,8,9,10,11].…”