<i>In situ</i> electric field simulation in metal/insulator/metal capacitors

Gaillard, Nicolas; Pinzelli, L.; Gros-Jean, M.; Bsiesy, A.

doi:10.1063/1.2357891

Cited by 63 publications

(50 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is also true of other deposition techniques that produce very uniform, smooth lms, such as metal-organic chemical vapour deposition (MOCVD). We note, in support of this assertion, work by Gaillard et al, 18 demonstrating that, for MIM samples in which the lower TiN electrode is deposited by sputtering (and therefore consists of many grains and a rough top surface), if the oxide layer is deposited by MOCVD, the roughness of the top interface is much less than that of the bottom. The inference is that the deposition of a homogeneous oxide layer gradually reduces the roughness of the top interface to a value determined by the thickness of the oxide.…”

Section: 15supporting

confidence: 54%

The interplay between structure and function in redox-based resistance switching

Kenyon

Munde

et al. 2019

Faraday Discuss.

View full text Add to dashboard Cite

We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages.Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

show abstract

Section: 15supporting

confidence: 54%

The interplay between structure and function in redox-based resistance switching

Kenyon

Munde

et al. 2019

Faraday Discuss.

View full text Add to dashboard Cite

show abstract

“…The carrier injection level was enhanced significantly by the introduction of Ag island film, accompanied by the obvious decrease of the threshold voltage. We attributed this increase in carrier injection to the surface roughening of Ag island film (49,50) and the enhanced local electromagnetic field surrounding Ag particles (51,52).…”

Section: Ecs Transactionsmentioning

confidence: 99%

(Invited) Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

Xie

Wang

et al. 2011

ECS Trans.

View full text Add to dashboard Cite

Silicon-rich silicon nitride (SiN X ) films have attracted enormous interests due to their promising luminescence properties and well compatibility with current CMOS technique. In this short review, the fabrication process of SiN X was addressed as well as their chemical composition and structure. The optical properties and future applications of the light emitting devices (LEDs) were also discussed. By analyzing the carrier conduction and combination mechanisms, electroluminescence (EL) intensity of LEDs was greatly improved through the following approaches: passivation of the interfacial states between SiN X films and Si substrates through NH 3 plasma pre-treatment and post-annealing process; the balance of carrier injection via SiO 2 electron accelerating layer; increase of the carrier-injection efficiency and light extraction efficiency and the enhancement of radiative recombination efficiency by surface plasmon.

show abstract

“…The increase in carrier injection is attributed to the rough surface of the Ag layer containing Ag particles, which enhances the inhomogeneous local electric fields at the interface between the Ag layer and the silicon nitride matrix. [30][31][32] The enhanced inhomogeneous local electric fields can increase the tunneling probability of carriers into Si QDs through the silicon nitride. Therefore, an Ag layer is believed to greatly increase h inj in Si QD LEDs.…”

mentioning

confidence: 99%

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light‐Emitting Diode by Localized Surface Plasmons

et al. 2008

View full text Add to dashboard Cite

Effective light emission from low-dimensional silicon materials such as porous silicon, silicon nanocrystals, and superlattices has been demonstrated at room temperature in spite of the indirect bandgap nature of bulk silicon. [1][2][3][4][5] In particular, silicon quantum dot (Si QD) light-emitting diodes (LEDs) have recently been investigated as a promising light source for the next generation of optical interconnections. [6][7][8] However, the quest for highly efficient Si QD LEDs remains unfulfilled. To achieve this goal, new LED structures are being developed to enhance the external quantum efficiency (h ext ), which is a product of the light-extraction efficiency (h extraction ), radiative efficiency (h rad ), and current-injection efficiency (h inj ). [9] Among the new approaches, increasing the radiative recombination rate by coupling QDs to surface plasmons (SPs, collective charge oscillations at the interface between a metal and a dielectric material) has attracted a great deal of attention. [10][11][12] Although enhanced photoluminescence (PL)of SP-coupled nanostructures such as QDs [13][14][15][16][17] and quantum wells (QWs) [18] has been reported, there has been no report concerning the enhancement of electroluminescence (EL) in Si QD LEDs through a Si QD-SP coupling effect. Here, we show the first evidence of enhanced h ext in a Si QD LED resulting from the coupling between Si QDs and localized surface plasmons (LSPs) and effective current tunneling into Si QDs from an Ag layer containing Ag particles inserted between the Si QD layer and Si substrate. Surface plasmon excitations in bounded geometries, such as nanostructured metallic particles, are LSPs. The resonant excitation of LSPs on the surface of nanostructured metallic particles by an incident electromagnetic field (light) causes strong light scattering and absorption, and enhanced local electromagnetic fields. LSPs are generally used in many applications such as ultrafast switches, optical tweezers, labeling biomolecules, optical filters, biosensors, surface-enhanced spectroscopies, plasmonics, and chemical sensors. [19][20][21][22] SPs are evanescent waves that exponentially decay with distance from a metal surface. Si QDs located within the near-field of the metal surface can be effectively coupled to SP mode. [13,18,19] In order to keep the close distance between SiQDs and the metal layer for Si QD-LSP coupling, we propose a Si QD LED structure with an Ag layer containing Ag particles inserted between the silicon nitride layer containing Si QDs and the Si substrate layer, as shown in Figure 1. Figure 2a and b shows cross-sectional transmission electron microscopy (TEM) images of Si QD LEDs with and without an Ag layer. Figure 2a depicts the interface between the silicon nitride and Si substrate of a reference Si QD LED. Figure 2b is an image of the interfaces between the silicon nitride layer, Ag layer, and the Si substrate. The silicon nitride film deposited on the Ag layer was similar in thickness to the silicon nitride layer in the re...

show abstract

In situ electric field simulation in metal/insulator/metal capacitors

Cited by 63 publications

References 6 publications

The interplay between structure and function in redox-based resistance switching

The interplay between structure and function in redox-based resistance switching

(Invited) Luminescence Properties of Silicon-Rich Silicon Nitride Films and Light Emitting Devices

Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light‐Emitting Diode by Localized Surface Plasmons

Contact Info

Product

Resources

About