In situ electron beam patterning for GaAs using electron-cyclotron-resonance plasma-formed oxide mask and Cl2 gas etching

Abstract

A new in situ fabrication process for GaAs is developed. In this process, electron- cyclotron-resonance oxygen plasma is used for the first time to form an oxide mask for Cl2 gas etching. Using this technique, the time and oxygen gas pressure required for the oxidation are drastically reduced, compared to other oxidation methods. Line patterns with submicron width are successfully fabricated by partial modification of the oxide mask by electron beam irradiation and subsequent Cl2 gas etching.

Fiber-Pump Semiconductor Lasers with Optical Antiguiding Layers for Horizontal Transverse Modes: Dependence on Mesa Width

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Ridge-Type Semiconductor Lasers with Optical Antiguiding Layers for Horizontal Transverse Modes: Dependence on Step Positions

“…These steps Át p and Át n are formed by lithography and regrowth. If we use an ultrahigh-vacuum (UHV) multiprocessing system, 12) the etched layers are not exposed to air during lithography and regrowth, which efficiently suppresses oxidation problems.…”

Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system

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