Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an <i>in situ</i> ultrahigh vacuum multichamber system

Yoshikawa, Takashi

doi:10.1116/1.589779

Cited by 9 publications

(3 citation statements)

References 12 publications

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“…The normalized PL peak intensity means the ratio of the peak intensity at a photon energy of around 1.59 eV after etching to that before etching. The experimental results of plasma etching were from [19]. After plasma etching, the etching surfaces of stripe structures had a more than 2 nm thick surface crystalline defect layer because of ultraviolet irradiation and high-energy ion bombardment [18].…”

Section: Methodsmentioning

confidence: 99%

“…Furthermore, to demonstrate that a neutral beam can etch GaAs without damaging its photoelectric effect, another approach for demonstrating damage-free NBE is needed. According to [19], the peak PL intensity of the plasma-etched stripe rapidly decreases when stripe width is decreased. The crystalline etched defect in the etching surface would enhance the non-irradiative carrier recombination and deteriorate the PL peak intensity of the GaAs stripe.…”

Section: Methodsmentioning

confidence: 99%

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Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

et al. 2011

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The first damage-free top-down fabrication processes for a two-dimensional array of 7 nm GaAs nanodiscs was developed by using ferritin (a protein which includes a 7 nm diameter iron core) bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the bio-template process, to remove the ferritin protein shell without thermal damage to the GaAs, we firstly developed an oxygen-radical treatment method with a low temperature of 280 °C. Then, the neutral beam etched the defect-free nanodisc structure of the GaAs using the iron core as an etching mask. As a result, a two-dimensional array of GaAs quantum dots with a diameter of ∼ 7 nm, a height of ∼ 10 nm, a high taper angle of 88° and a quantum dot density of more than 7 × 10(11) cm(-2) was successfully fabricated without causing any damage to the GaAs.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

et al. 2011

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“…The normalized PL intensity means the ratio of the intensity after etching to that before etching. In plasma etching, the etching damage at the surface would enhance the nonirradiative carrier recombination and cause PL intensity to decrease, especially in the narrower stripes [6]. Comparatively, the PL intensities after NBE were almost as the same as before etching, which were independent of stripe width.…”

Section: Photoluminescence After Neutral Beam Etchingmentioning

confidence: 95%

Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications

Budiman

Wang

Huang

et al. 2011

2011 37th IEEE Photovoltaic Specialists Conference

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A series of damage-free fabrication processes for a twodimensional array of sub-10-nm GaAs nanodiscs was developed by using bio-templates and neutral beam etching. The photoluminescence of GaAs etched with a neutral beam clearly revealed that the processes could accomplish defect-free etching for GaAs. In the biotemplate process, a hydrogen-radical treatment was used to remove the native oxide on the GaAs surface, and then neutral beam oxidation (NBO) was used to form a hydrophilic 1-nm-thick GaAs oxide (GaAs-NBO) film. The two-dimensional array of ferritins (protein including a 7nm-diameter iron core) can be arranged well on hydrophilic GaAs-NBO film. The ferritin protein shell was removed using an oxygen-radical treatment at a low temperature of 280°C without thermal damage to the GaAs. Then, the neutral beam etched the the GaAs to form defect-free nanodisc structure of using the iron core as an etching mask. Finally, the iron oxide core was removed by wet etching with diluted hydrogen chloride and the fabrication process was completed without inflicting any damage to the GaAs. As a result, a twodimensional array of GaAs quantum dots with a diameter of ~7 nm, a height of ~10 nm, a high taper angle of 88°, and a quantum dot density of more than 7×10 11 cm -2 was successfully fabricated without causing any damage to the GaAs.978-1-4244-9965-6/11/$26.00 ©2011 IEEE

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Fabrication of 3D Quantum Dot Array by Fusion of Bio-Template and Neutral Beam Etching I: Basic Technologies

Samukawa

2016

Intelligent Nanosystems for Energy, Information and Biological Technologies

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Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system

Abstract: Articles you may be interested inNanoscale structure fabrication of multiple Al Ga Sb ∕ In Ga Sb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals

Cited by 9 publications

References 12 publications

Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

Damage-free top-down processes for fabricating two-dimensional arrays of 7 nm GaAs nanodiscs using bio-templates and neutral beam etching

Damage-free top-down processes for fabricating two-dimensional array of sub-10-nanometer GaAs nanodiscs using bio-template and neutral beam etching for intermediate band solar cell applications

Fabrication of 3D Quantum Dot Array by Fusion of Bio-Template and Neutral Beam Etching I: Basic Technologies

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