I-III-VI chalcogenide semiconductor nanocrystals: Synthesis, properties, and applications

Polymorphic Metastability in Colloidal Semiconductor Nanocrystals

“…In the last ten years, dichalcogenide precursors have been employed in the syntheses of ternary I‐III‐VI 2 semiconductor nanocrystals [20,57,66,67] . Ternary I‐III‐VI 2 semiconductor nanocrystals with an A + B 3+ E 2− 2 composition are of interest as relatively non‐toxic alternatives to cadmium and lead‐containing semiconductors, with applications in thin film solar cells, light emitting diodes (LEDs), photocatalysis, and bioimaging [68] . CuInSe 2 is a well‐known I‐III‐VI 2 semiconductor, which, like other I‐III‐VI 2 semiconductors, crystallizes in the chalcopyrite structure (space group ) at low temperatures [69] .…”

Synthesis and structure design of I–III–VI quantum dots for white light-emitting diodes

“…In addition, these QDs can be synthesized easily, and are environmentally friendly and cost-effective, making them ideal materials for fabricating high-quality white LEDs. [19][20][21] Since 2004, when the molecular single-source precursor (PPh 3 ) 2 CuIn(SEt) 4 was thermally decomposed to form colloidal CuInS 2 QDs with a tunable emission peak between 662 nm and 673 nm at 200 1C, 22 many efforts have been devoted to improving photoluminescence quantum yield (PL QY), expanding the tunable range of the spectrum, and exploring optimized synthesis routes.…”

Efficient Cr(vi) photoreduction under natural solar irradiation using a novel step-scheme ZnS/SnIn4S8 nanoheterostructured photocatalysts

“…As a result, it is critical to explore nanomaterials containing eco-friendly and low-toxic components. 7,8 Furthermore, binary metal chalcogenides have reduced charge separation efficiency and are susceptible to photo-corrosion, limiting their practical usefulness. As a result, numerous strategies for improving the photocatalytic efficiency of binary chalcogenides were investigated, including the use of sacrificial agents (Na 2 S, Na 2 SO 3 and alcohols), the fabrication of heterojunction, the development of Z -scheme heterojunction, the creation of a covering layer, and the introduction of defects.…”