1998
DOI: 10.1103/physrevlett.81.5374
|View full text |Cite
|
Sign up to set email alerts
|

Ab InitioCalculation of Self-Energy Effects on Optical Properties of GaAs(110)

Abstract: We present a first-principles calculation of self-energy effects on the optical properties of the GaAs(110) surface. Three main results are obtained. (a) The self-energy shifts for the valence bands are larger for surface-localized states, at odds with the commonly assumed "scissor operator" hypothesis. (b) The computed shifts display an almost linear dependence on the surface localization of the wave function; this allows us to realize a well-converged calculation of optical properties based on the GW -correc… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

7
72
1

Year Published

1998
1998
2004
2004

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 96 publications
(80 citation statements)
references
References 35 publications
7
72
1
Order By: Relevance
“…6. We compare these results with the results of Pulci et al [23], obtained by means of continuum theory. In the upper panel of Fig.…”
Section: Resultssupporting
confidence: 60%
See 1 more Smart Citation
“…6. We compare these results with the results of Pulci et al [23], obtained by means of continuum theory. In the upper panel of Fig.…”
Section: Resultssupporting
confidence: 60%
“…The most remarkable result of nonlocality is the k-dependence of the planar polarizability in Eq. (23 …”
Section: Ij Are Called Interplanar Transfer Tensors If Iaj and Intrapmentioning
confidence: 99%
“…As pointed out earlier, such deviations could be corrected by improving the LDA with self-energy terms. 39,40 Qualitative theory-experiment differences are also visible in the FS maps of Fig. 10.…”
Section: Discussionmentioning
confidence: 76%
“…This limitation does not only apply to the excited states, since GWcorrected spectra for different systems have also shown large self-energy corrections for valence ͑occupied͒ states, particularly when they present a strong localization. 39,40 Furthermore, after the photoelectron excitation process, the electron has to surpass the attractive interaction with the hole just created before exiting, leading to a further renormalization of the energy bands. Although for metallic systems the magnitude of the LDA errors tends to be small, in semiconductors and insulators it may vary from a few hundredths of eV up to more than 1 eV.…”
Section: Arups Simulationsmentioning
confidence: 99%
“…26 The relevance of semicore states in the self-energy was also pointed out by Rohlfing et al (1995Rohlfing et al ( , 1998. 27 A typical bottleneck is given by the summations over the empty states , both for the determination of the screening and for G. Another difficulty comes from the convergence of Brillouin zone integrals (i.e., k-point sampling) of functions that have a factor ͉kϩG͉ 2 in the denominator as the exchange term (Pulci, 1998 (Marini et al, 2002); dashed line, DFT-LDA eigenvalues; ᭺, experimental data compiled by Courths and Hü fner (1984). A comparison to more recent experimental data (Strocov et al, 1998(Strocov et al, , 2001) yields the same agreement.…”
Section: A Evaluation Of the Green's Function Gmentioning
confidence: 99%