2004
DOI: 10.1103/physrevb.69.045312
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Electronic structure and Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si(111)

Abstract: The electronic structure and the Fermi surface of two-dimensional rare-earth silicides epitaxially grown on Si͑111͒, YSi 2 and GdSi 2 , have been studied by a combination of angle-resolved ultraviolet photoemission spectroscopy and density functional theory calculations. Both silicides present a very similar electronic structure, with two characteristic electronic bands below the Fermi energy. One crosses the Fermi energy near the ⌫ point of the surface Brillouin zone ͑hole pocket͒ and the other one close to t… Show more

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Cited by 42 publications
(40 citation statements)
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“…An excellent agreement between our experimental points and previous ARPES measurements [40] is found. The agreement is also excellent with the calculated band structure from Rogero et al [43] in the direction ΓM , but not in the direction ΓK. Obviously, the Y Si 2 DFT-LDA calculation reproduces the global shape of the measured hole band but the higher-energy excitations are shifted by values as large as 250 meV.…”
Section: The Joint Density Of States Approximationsupporting
confidence: 82%
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“…An excellent agreement between our experimental points and previous ARPES measurements [40] is found. The agreement is also excellent with the calculated band structure from Rogero et al [43] in the direction ΓM , but not in the direction ΓK. Obviously, the Y Si 2 DFT-LDA calculation reproduces the global shape of the measured hole band but the higher-energy excitations are shifted by values as large as 250 meV.…”
Section: The Joint Density Of States Approximationsupporting
confidence: 82%
“…Obviously, the Y Si 2 DFT-LDA calculation reproduces the global shape of the measured hole band but the higher-energy excitations are shifted by values as large as 250 meV. Similar shifts for the predicted surface-state energy positions around the K point have been mentioned before for Y Si 2 and GdSi 2 and the necessity to improve LDA self-energy term has been noted [43].…”
Section: The Joint Density Of States Approximationsupporting
confidence: 82%
“…1). Although there is a previous theoretical work in the same system, the authors have assumed the so-called BT 4 atomic geometry and optimized it [23]. (2) The growth of a few layers of YSi 1.7 on Si(1 1 1) was studied considering models [14][15][16][17], which have been initially proposed to explain the adsorption of RE elements on Si(1 1 1), but up to now, there are no theoretical calculations for YSi 2 on Si(1 1 1).…”
Section: Introductionmentioning
confidence: 99%
“…This confirms its localized nature and together with its position in the fundamental silicon gap we identify band (A) as surface state. A discussion of the detailed nature of bonding in this material is forthcoming [10]. In the following we compare the calculated dispersion of band (A) to the experimental spectra.…”
mentioning
confidence: 99%