<i>Ab initio</i>approach to structural, electronic, and ferroelectric properties of antimony sulphoiodide

Amoroso, Danila; Picozzi, Silvia

doi:10.1103/physrevb.93.214106

Cited by 27 publications

(24 citation statements)

References 41 publications

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“…We speculate that the observed enhancement of σcaa(2) [=σcbb(2)] in the shift current is related to the electron transition between S and I sites and that between S and Sb sites (Fig. 5 A ) (44).…”

Section: Resultsmentioning

confidence: 97%

Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Sotome

Nakamura

Fujioka

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

104

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SignificanceShift current is one of the bulk photovoltaic phenomena in the materials without inversion symmetry, originating from the geometric Berry phase of the constituting electron bands. This concept of photocurrent generation based on the real-space shift of the electron cloud on the short timescale of optical transition is distinct from that of conventional p–n junction photovoltaics, where the carriers are driven by the built-in Coulomb potential. We experimentally demonstrate for a ferroelectric polar semiconductor how the subpicosecond charge swing on the relevant chemical bond changes its dynamics while scanning the excitation photon energy across the bandgap. On the interband photoexcitation above the bandgap, a finite net charge flow is produced along the electrically polar direction.

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Section: Resultsmentioning

confidence: 97%

Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Sotome

Nakamura

Fujioka

et al. 2019

Proc. Natl. Acad. Sci. U.S.A.

104

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“…New materials with possible bulk Rashba effects are being developed, such as superconducting BiPd . A Rashba‐Dresselhaus type spin splitting is predicted in a classical ferroelectric semiconductor SbSI . Moreover, the magnetic doping of bulk Rashba semiconductors is believed to have profound consequences for both fundamental physics and device applications.…”

Section: Discussion and Outlookmentioning

confidence: 99%

Bulk Rashba Semiconductors and Related Quantum Phenomena

Bahramy

Ogawa

2017

Advanced Materials

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zone (BZ) unless it is protected by a special crystalline symmetry. If the breaking of IS is such that the electrons feel a net gradient of potential normal to their momentum direction, the SOI results in a situation where every electron's spin is locked perpendicular to its momentum (see Figure 1). This phenomenon is called the Rashba effect [2,3] and is known to be responsible for many novel quantum phenomena such as spin Hall and Edelstein effects, [4,5] spin galvanic effect, [6] magnetoelectric effect, [7] and non-centrosymmetric superconductivity. [8] Although the Rashba effect has been known for more than sixty years, it has been mainly sought for in two-dimensional (2D) electronic systems, such as the semiconductor heterostructures [9] and the surface/interface of noble and heavy metals. [10] This is because the general rationale has been that the bulk systems can not exhibit a sizable Rashba spin splitting (RSS) due to the internal constraints such as the electric dipole screening. The recent angle-resolved photoemission spectroscopy (ARPES) study by Ishizaka et al. has, however, proven that this picture is not always true. [11] Their ARPES data, backed by the first principles calculations, [12] have revealed that in the polar semiconductor BiTeI, the bulk states exhibit an extremely large RSS. In fact, the RSS observed in bulk BiTeI has been shown [11] to exceed the largest RSS realized in a 2D system. [10] Further ARPES experiments [13][14][15][16][17] and ab initio calculations [18] have unveiled the similar effect in the other bismuth tellurohallides (BiTeBr and BiTeCl) and even in some ferroelectric semiconductors such as GeTe. [19,20] In all these systems, it turns out that the bulk RSS originates from an anomalous ordering of the conduction and/or valence bands combined with the strong SOI and narrowness of the band gap. [12] The bulk RSS has also been shown to lead to a variety of quantum effects in BiTeX (X = Cl, Br and I) compounds such as unique optical transitions, [21] strong magnetooptical responses, [22] a divergent orbital dia-/para-magnetism, [23] zero-bias magneto-and galvanic photocurrent [24,25] and a nontrivial Berry's phase. [26] Moreover, it has been theoretically proposed [27] and indications have been experimentally reported [28,29] that these systems may turn into a topological insulator under the application of a hydrostatic pressure. Together, these effects indicate that bulk RSS provide a new route to manipulate the spin degree of freedom of electrons, and BiTeX, as Bithmuth tellurohalides BiTeX (X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba-type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state-of-the-art first-principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter-and intra-band optical transitions, enhanced magneto-optical response...

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“…In these ferroelectric semiconductors, V OC can exceed 10 3 V upon photoexcitation 17 . It is noted that SbSI can have a Rashba-type spin splitting to show circular photogalvanic effects 22 , whose sign can be reversed by the orientation of Ps 23 . respectively, under illumination, illustrating the poling-dependent zero-bias photocurrent and near-linear transport properties at this temperature.…”

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confidence: 99%

Shift current in the ferroelectric semiconductor SbSI

et al. 2017

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Spontaneous photocurrent, termed shift current, can flow in noncentrosymmetric bulk crystals due to topological nature of constituting electronic bands. The shift current with less-dissipative character may have remarkable advantages over the conventional drift photocurrent driven by built-in potential or external electric field. We revisit the generation and transport of shift current in a prototypical ferroelectric semiconductor SbSI near its band gap energy. It is revealed that the switchable shift current is steadily generated by photoexcitation down to low temperature, appears over a distance of millimeter range in a highly insulating bulk without noticeable decay, and largely exceeds polarization charge in the sample, reflecting its Berry phase origin.

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Ab initioapproach to structural, electronic, and ferroelectric properties of antimony sulphoiodide

Cited by 27 publications

References 41 publications

Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Bulk Rashba Semiconductors and Related Quantum Phenomena

Shift current in the ferroelectric semiconductor SbSI

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