Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Sotome, M.; Nakamura, Masao; Fujioka, Jun; Ogino, M.; Kaneko, Yoshio; Morimoto, Takahiro; Zhang, Y.; Kawasaki, Masashi; Nagaosa, Naoto; Tokura, Y.; Ogawa, Norio

doi:10.1073/pnas.1802427116

Cited by 96 publications

(67 citation statements)

References 50 publications

(85 reference statements)

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“…Antimony sulfoiodide belongs to group of crystals with noncentrosymmetric structure [38,64]. An origin of a bulk photovoltaic effect in SbSI is usually ascribed to the shift current [38,39,40,41], which is recognized as a result of the second-order nonlinear optical response [38]. The form of the response function implies that the position of the electron wave packet immediately shifts in real space upon the interband optical transition [41].…”

Section: Discussionmentioning

confidence: 99%

“…The form of the response function implies that the position of the electron wave packet immediately shifts in real space upon the interband optical transition [41]. A shift vector [65], recognized as an average distance and direction of the shift, is given by the difference in the Berry connection of the Bloch wave functions [40,41] of the two corresponding bands. It has a non-zero value only when the inversion symmetry is broken.…”

Section: Discussionmentioning

confidence: 99%

“…Ogawa and coworkers have investigated SbSI bulk crystals for application in different types of photovoltaic devices [37,38]. They have revisited the zero-bias photocurrent in a ferroelectric semiconductor SbSI to unveil nonequilibrium electron transport by the shift current [39,40,41].…”

Section: Introductionmentioning

confidence: 99%

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A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

2019

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A ferroelectric-photovoltaic effect in nanowires of antimony sulfoiodide (SbSI) is presented for the first time. Sonochemically prepared SbSI nanowires have been characterized using high-resolution transmission electron microscopy (HRTEM) and optical diffuse reflection spectroscopy (DRS). The temperature dependences of electrical properties of the fabricated SbSI nanowires have been investigated too. The indirect forbidden energy gap EgIf = 1.862 (1) eV and Curie temperature TC = 291 (2) K of SbSI nanowires have been determined. Aligned SbSI nanowires have been deposited in an electric field between Pt electrodes on alumina substrate. The photoelectrical response of such a prepared ferroelectric-photovoltaic (FE-PV) device can be switched using a poling electric field and depends on light intensity. The photovoltage, generated under λ = 488 nm illumination of Popt = 127 mW/cm2 optical power density, has reached UOC = 0.119 (2) V. The presented SbSI FE-PV device is promising for solar energy harvesting as well as for application in non-volatile memories based on the photovoltaic effect.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

2019

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“…Consequently, much larger above band gap photovoltages can be generated since the limitations of Shockley–Quessier are feasibly overcome. 28 , 29 Recent studies have also revealed that the photocarriers in SCs can travel long distances, compared to drift transport mechanism in traditional solar cells; hence, SCs can offer efficient solar energy conversion. 30 , 31 From the first-principle calculations, Tan and co-workers reported that electronic states with delocalized covalent bonding highly asymmetric along the polarization direction are required for strong SC enhancements, 22 which affirms the earlier findings on BaTiO 3 by Young and Rappe.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

et al. 2020

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Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shift currents in monolayer two-dimensional (2D) GeS and SnS has systematically been investigated using the first-principles calculations. The conduction bands of those materials are more responsive to strain than the valence bands. Increased equibiaxial compressive strain leads to a drastic reduction in the band gap and finally the occurrence of phase transition from semiconductor to metal at strains of −15 and −14% for GeS and SnS, respectively. On the other hand, tensile equibiaxial strain increases the band gap slightly. Similarly, increased equibiaxial compressive strain leads to a steady almost four times increase in the shift currents at a strain of −12% with direction change occurring at −8% strain. However, at phase transition from semiconductor to metal, the shift currents of the two materials completely vanish. Equibiaxial tensile strain also leads to increased shift currents. For SnS, shift currents do not change direction, just as the case of GeS at low strain; however, at a strain of +8% and beyond, direction reversal of shift currents beyond the band gap in GeS occur.

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“…in real space following photoexcitation [37], are particularly important, as they play a dominant role in both the giant, anisotropic second harmonic response [34,35,38] as well as the bulk photovoltaic effect [36] seen in WSMs, and may be traced to a difference in Berry connection between the bands participating in the optical transition [39,40]. The most common nonlinear optical probe, second harmonic generation (SHG) spectroscopy, is thus sensitive to the asymmetric carrier distribution that accompanies photocurrent generation, making it a powerful tool for measuring the effect of transient photocurrents on material symmetry.…”

Section: Introductionmentioning

confidence: 99%

Photocurrent-driven transient symmetry breaking in the Weyl semimetal TaAs

Sirica¹,

Orth²,

Scheurer³

et al. 2020

Preprint

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Symmetry plays a central role in conventional and topological phases of matter, making the ability to optically drive symmetry changes a critical step in developing future technologies that rely on such control. Topological materials, like the newly discovered topological semimetals, are particularly sensitive to a breaking or restoring of time-reversal and crystalline symmetries, which affect both bulk and surface electronic states. While previous studies have focused on controlling symmetry via coupling to the crystal lattice, we demonstrate here an all-electronic mechanism based on photocurrent generation. Using second-harmonic generation spectroscopy as a sensitive probe of symmetry changes, we observe an ultrafast breaking of time-reversal and spatial symmetries following femtosecond optical excitation in the prototypical type-I Weyl semimetal TaAs. Our results show that optically driven photocurrents can be tailored to explicitly break electronic symmetry in a generic fashion, opening up the possibility of driving phase transitions between symmetry protected states on ultrafast time scales.

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Spectral dynamics of shift current in ferroelectric semiconductor SbSI

Cited by 96 publications

References 50 publications

A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

A Ferroelectric-Photovoltaic Effect in SbSI Nanowires

Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

Photocurrent-driven transient symmetry breaking in the Weyl semimetal TaAs

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