2016
DOI: 10.1016/j.surfcoat.2016.03.096
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Hysteresis behavior during facing target magnetron sputtering

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Cited by 8 publications
(4 citation statements)
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“…In subsequent publications [65,[120][121][122][123][124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139], Depla et al reported on the development of the original RSD model. For example, in [65], kinetic equations appeared for all parts of the target surface ∂θ tM /∂t, ∂θ tC ch /∂t and ∂θ tC /∂t (see Figure 14), in which all considered physical processes are taken into account.…”
Section: Development Of the Rsd Modelmentioning
confidence: 99%
“…In subsequent publications [65,[120][121][122][123][124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139], Depla et al reported on the development of the original RSD model. For example, in [65], kinetic equations appeared for all parts of the target surface ∂θ tM /∂t, ∂θ tC ch /∂t and ∂θ tC /∂t (see Figure 14), in which all considered physical processes are taken into account.…”
Section: Development Of the Rsd Modelmentioning
confidence: 99%
“…This effect has no influence when the redeposition fraction is increased. Indeed, in the current version of the RSD code, as compared to the version used in [17], compound sputtering is described as an atomistic process while the congruent aspect of sputtering has been preserved. When the reactive atoms are redeposited on the target, their reaction probability is low as the target surface at the second critical point is fully poisoned.…”
Section: Example 1: Redeposition Of Sputtered Atomsmentioning
confidence: 99%
“…Initially, target poisoning was attributed to chemisorption, which is the formation of a compound monolayer due to the chemical interaction of the target surface with the neutral reactive gas atoms [1]. Both experiments and simulations showed the importance of at least three additional processes [5,6,7,8,9]. First, chemisorbed material can be knocked into the target subsurface by ions of the working gas (often argon).…”
Section: Introductionmentioning
confidence: 99%
“…This is termed direct implantation. Finally, redeposition of sputtered atoms can also contribute to target poisoning but is mainly important at high pressures, low mass of the target atoms and/or for specific set-ups such as facing target sputtering [9] and rotating cylindrical magnetrons [7,8]. A schematic overview of the aforementioned processes is shown in Figure 1.…”
Section: Introductionmentioning
confidence: 99%