Hydrothermal growth of scandium-doped ZnO crystals

Zuo, Yu; Lu, Fu-Hua; Zhang, Changlong; Yin, Hao; Zhou, Wenbo; Huo, Han-De; Qin, Shijie; Zhou, Haitao; He, Xin; Li, Dong-Ping; Zhang, Haixia; Chen, Yixin; Gu, Shulin

doi:10.1016/j.jcrysgro.2010.11.088

Cited by 7 publications

(1 citation statement)

References 10 publications

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“…The crystal quality, as investigated by X-ray rocking curve measurement using the (0002) reflection, is 24.2 arcsec. This value is close to high-quality undoped ZnO crystal using the hydrothermal method (18 arcsec) [10] and higher than those of ZnO single crystal using the chemical vapour transport method (90-200 arcsec) [11] and Scandium-doped one using the hydrothermal method (38.9-46.1 arcsec) [12], This means that we have obtained a high quality In-doped ZnO single crystal using the hydrothermal method. The growth rates for both the <0001> and <000-1> directions were about 80 m day.…”

Section: Resultssupporting

confidence: 66%

Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

Kano¹,

Wakamiya²,

Yamanoi

et al. 2012

IEEE Trans. Nucl. Sci.

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High quality In-doped ZnO single crystal was grown using the hydrothermal method. The growth rate for both <0001> and <000-1> directions is about 80 m/day. The X-ray rocking curve (XRC) full width at half maximum (FWHM) of the (0002) reflection is 24.2 arcsec. In order to make it possible to use this material as a scintillator for in situ imaging of soft X-ray laser with high spatial resolution, we prepared an In-doped ZnO wafer (9.0 mm x 9.0 mm x 0.75 mm) and mounted it on a vacuum flange. The decay time constant is evaluated to be 120 ps, therefore making it an ideal scintillator for in situ imaging device of soft X-ray laser with high spatial resolution. Furthermore, In-doped ZnO scintillator with such short decay time constant is suitable for high accuracy alignment and synchronization of ultrafast, short wavelength laser sources for pump-and-probe experiments.

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Section: Resultssupporting

confidence: 66%