Hydrogenation of the buffer-layer graphene on 6H-SiC (0001): A possible route for the engineering of graphene-based devices

Lin, Yu-Pu; Ksari, Younal; Themlin, J.‐M.

doi:10.1007/s12274-014-0566-0

Cited by 21 publications

(18 citation statements)

References 52 publications

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“…From literature it is well known that about 30% of the C-atoms of the buffer layer form covalent bonds to Si atoms of the SiC substrate, which corresponds to 0.3 ML. 46,47 There is an excellent quantitative agreement between this number and the amount of Li that we had to deposit in order to induce the (1 × 1)-reconstruction (0.28 ML), i.e. for each Si atom at the interface, we deposited approximately one Li-atom.…”

Section: Resultsmentioning

confidence: 69%

Li-intercalated graphene on SiC(0001): An STM study

et al. 2017

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We present a systematical study via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) on the effect of the exposure of Lithium (Li) on graphene on silicon carbide (SiC). We have investigated Li deposition both on epitaxial monolayer graphene and on buffer layer surfaces on the Si-face of SiC. At room temperature, Li immediately intercalates at the interface between the SiC substrate and the buffer layer and transforms the buffer layer into a quasi-free-standing graphene. This conclusion is substantiated by LEED and STM evidence. We show that intercalation occurs through the SiC step sites or graphene defects. We obtain a good quantitative agreement between the number of Li atoms deposited and the number of available Si bonds at the surface of the SiC crystal. Through STM analysis, we are able to determine the interlayer distance induced by Li-intercalation at the interface between the SiC substrate and the buffer layer.

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Section: Resultsmentioning

confidence: 69%

Li-intercalated graphene on SiC(0001): An STM study

et al. 2017

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“…Inverse photoemission spectra showed that the buffer layer possesses a state at 1.1 eV above the Fermi energy, associated with Si dangling bonds, but it disappears after H intercalation. [27] STS on graphene on the C-face of SiC [SiC(0001 ̅ )] also showed similar peaks. [28] This surface also has Si dangling bonds at the interface.…”

mentioning

confidence: 86%

Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

Murata¹,

Cavallucci²,

Tozzini³

et al. 2017

Nano Res.

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Si dangling bonds without H termination at the interface of quasi-free standing monolayer graphene (QFMLG) are known scattering centers that can severely affect carrier mobility. In this report, we study the atomic and electronic structure of Si dangling bonds in QFMLG using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS), atomic force microscopy (AFM), and density functional theory (DFT) calculations. Two types of defects with different contrast were observed on a flat terrace by STM and AFM.Their STM contrast varies with bias voltage. In STS, they showed characteristic peaks at different energies, 1.1 and 1.4 eV. Comparison with DFT calculations indicates that they correspond to clusters of 3 and 4 Si dangling bonds, respectively. The relevance of these results for the optimization of graphene synthesis is discussed.

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“…10). Epitaxial graphene synthesis on SiC occurs through a series of complex surface reconstructions [126]- [127] and includes a C-rich buffer, with large percentage of sp 2 hybridization, before the real graphene [128]- [130]. This buffer layer may be more or less defective with more or less Si dangling bonds at the interface and has a strong influence on the electronic properties of epitaxial graphene on SiC(001).…”

Section: Experimental Aspects Of the Graphene/semiconductor Junctionmentioning

confidence: 99%

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

2016

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In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properties and ease of manipulation, graphene offers the possibility of integration with the exiting semiconductor technology for next-generation electronic and sensing devices. In this context, the understanding of the graphene/semiconductor interface is of great importance since it can constitute a versatile standalone device as well as the building-block of more advanced electronic systems. Since graphene was brought to the attention of the scientific community in 2004, the device research has been focused on the more complex graphene transistors, while the graphene/semiconductor junction, despite its importance, has started to be the subject of systematic investigation only recently. As a result, a thorough understanding of the physics and the potentialities of this device is still missing. The studies of the past few years have demonstrated that graphene can form junctions with 3D or 2D semiconducting materials which have rectifying characteristics and behave as excellent Schottky diodes. The main novelty of these devices is the tunable Schottky barrier height, a feature which makes the graphene/semiconductor junction a great platform for the study of interface transport mechanisms as well as for applications in photo-detection, high-speed communications, solar cells, chemical and biological sensing, etc. In this paper, we review the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications.

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Hydrogenation of the buffer-layer graphene on 6H-SiC (0001): A possible route for the engineering of graphene-based devices

Cited by 21 publications

References 52 publications

Li-intercalated graphene on SiC(0001): An STM study

Li-intercalated graphene on SiC(0001): An STM study

Atomic and electronic structure of Si dangling bonds in quasi-free-standing monolayer graphene

Graphene Schottky diodes: An experimental review of the rectifying graphene/semiconductor heterojunction

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