Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation

Fukata, Naoki; Li, C.; Morihiro, H.; Murakami, Kouichi; Mitome, Masanori; Bando, Yoshio

doi:10.1007/s00339-006-3642-9

Cited by 19 publications

(14 citation statements)

References 34 publications

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“…While our previous study 1 showed that only an insignificant fraction of the Er 3+ ions is sensitized by nanocrystals, other authors observed a clear correlation between the nanocrystal and erbium emission intensities in passivation studies, 25 which suggests that a physical link does exist between the NCs and Er 3+ optical properties. In order to inves-tigate the role of Si nanocrystals in LC-mediated Er 3+ excitation, here we study the effect of hydrogen passivation on the LC-Er 3+ interaction.…”

Section: Introductionmentioning

confidence: 73%

Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals

et al. 2008

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The influence of hydrogen passivation on luminescence-center-mediated excitation of Er 3+ in Er-doped Si-rich SiO 2 films with significantly different microstructures is studied. Photoluminescence measurements are presented for samples containing no detectable silicon nanocrystals ͑annealed at 600°C͒ and for samples containing silicon nanocrystals ͑annealed at 1100°C͒ as a function of hydrogen passivation temperature. Passivation is found to have little effect on the Er 3+ photoluminescence intensity at 1535 nm in the samples that do not contain nanocrystals. In contrast, a pronounced increase in the Er 3+ photoluminescence intensity is observed in the samples containing Si nanocrystals, which is accompanied by a similar increase in the nanocrystal photoluminescence intensity and a gradual increase in the Si nanocrystal emission lifetime. This observation is attributed to two interrelated effects, namely, ͑a͒ an increase in the density of fully passivated optically active nanocrystals due to the passivation-induced removal of silicon dangling bonds and ͑b͒ a concurrent reduction in nonradiative Er 3+ relaxation from levels above the 4 I 13/2 level due to a direct interaction of excited Er 3+ ions with silicon dangling bonds. In addition, the observed counterintuitive gradual increase in the nanocrystal photoluminescence decay time upon passivation is successfully explained taking into account a passivation-induced change in the concentration of optically active nanocrystals with different sizes and the inhomogeneous nature of the nanocrystal-related emission band. It is shown that the combination of luminescence-center-mediated Er 3+ excitation and silicon-dangling-bond-induced Er 3+ de-excitation can explain at least 14 experimental observations reported by independent authors.

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Section: Introductionmentioning

confidence: 73%

Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals

et al. 2008

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“…On the other hand, nc-Si with diameters ranging from 3 to 5 nm were observed in the specimen after the ex situ annealing at 900°C. 16 The diameter distribution of nc-Si after ex situ annealing is shown in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

“…More recently, we have synthesized Er-doped SiO 2 including nc-Si by laser ablation and investigated the hydrogen passivation effect of interfacial defects between nc-Si and the SiO 2 matrix in enhancing energy transfer from nc-Si to Er ions, resulting in enhanced Er ion emission. 16 To maximize the effectiveness of nc-Si, it is necessary to further investigate the formation process of nc-Si within an SiO 2 matrix. In the present study, we investigated this by in situ annealing while taking transmission electron microscopy ͑TEM͒ measurements and ex situ annealing in an electronic furnace.…”

Section: Introductionmentioning

confidence: 99%

Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO2

Fukata

Morihiro

Shirakawa

et al. 2007

Journal of Applied Physics

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The formation of Si nanocrystallites ͑nc-Si͒ in erbium ͑Er͒-dispersed SiO x ͑x ഛ 2͒ films was investigated by in situ annealing while performing transmission electron microscopy measurements. The correlation between the formation of nc-Si and Er ion emissions was also comprehensively investigated by photoluminescence and electron spin resonance measurements. The results showed that the formation of nano-Si region with the suitable size is important for enhancement of Er ion emission.

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“…[17] We also observed a similar signal with a g-value of 2.005 for nanocrystalline Si embedded in SiO 2 . [18] The P concentration in P-doped SiNWs was roughly estimated using the ESR linewidth of conduction electrons. The ESR linewidth of P donor/conduction electrons significantly depends on the P concentration.…”

Section: Phosphorus Dopingmentioning

confidence: 99%

Impurity Doping in Silicon Nanowires

Fukata

2009

Advanced Materials

104

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Silicon nanowires (SiNWs) have considerable potential to assist the realization of next‐generation metal‐oxide semiconductor field‐effect transistors (MOSFETs) with vertical structures. Impurity doping and its control is a key technique in the creation of SiNW devices, which renders it necessary to develop characterization methods for dopant atoms in SiNWs. In this Research News, we described how the states of the dopant atoms boron and phosphorus can be detected.

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Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation

Cited by 19 publications

References 34 publications

Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals

Effect of hydrogen passivation on luminescence-center-mediated Er excitation in Si-richSiO2with and without Si nanocrystals

Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO2

Impurity Doping in Silicon Nanowires

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