Hydrogenation-Assisted Lateral Micromachining of (111) Silicon Wafers

Darbari, Sara; Azimi, Sara; Mohajerzadeh, S.; Sammak, A.; Izadi, N.; Famini, S.

doi:10.1109/jmems.2008.2007247

Cited by 6 publications

(2 citation statements)

References 11 publications

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“…Incorporation of nanostructures to the parallel plates of interdigital capacitor of the sensor presents a considerable amount of capacitance and besides it, the variations of such a sensor in response to the acceleration is more notable in compare with the simple plate one [38]. As the emission current of as mentioned nanostructures is very sensitive to distance, this sensor is very sensitive to the acceleration.…”

Section: Modelingmentioning

confidence: 99%

High sensitivity nanostructure incorporated interdigital silicon based capacitive accelerometer

Mehran

Mohajerzadeh

2015

Microelectronics Journal

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Section: Modelingmentioning

confidence: 99%

High sensitivity nanostructure incorporated interdigital silicon based capacitive accelerometer

Mehran

Mohajerzadeh

2015

Microelectronics Journal

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“…If (1 1 1) silicon wafers are desired, a surface/ bulk micromachining (SBM) process could be used [19]. The use of hydrogen-assisted lateral etching in such wafers could lead to suspension of desired features and sensors [20].…”

Section: Introductionmentioning

confidence: 99%

Design, simulation and fabrication of a MEMS accelerometer by using sequential and pulsed-mode DRIE processes

Gholamzadeh

Jafari

Gharooni

2016

J. Micromech. Microeng.

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A sensitive half-bridge MEMS accelerometer fabricated by sequential and pulsed-mode processes is presented in this paper. The proposed accelerometer is analyzed by using conventional equations and the finite element method. The micromachining technology used in this work relies on two processes: sequential and pulsed-mode. In the sequential deep reactive ion etching process, a mixture of hydrogen and oxygen with a trace value of SF6 is used instead of polymeric material in the passivation step. The pulsed-mode process employs periodic hydrogen pulses in continuous fluorine plasma. Because of the continuous nature of this process, plus the in situ passivation caused by the hydrogen pulses, scallop-free sidewalls are achieved and the etch rate is also relatively high. Furthermore, the functional characteristics of the fabricated accelerometer sensor are measured and reported. Measurement results, which are in good agreement with simulations, show that the functional characteristics of the fabricated sensor are as follows: resonance frequency of about 2 kHz, sensitivity of 76 mV g−1 and Brownian noise equivalent acceleration of g .

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