Hydrogenated silicene based magnetic junction with improved tunneling magnetoresistance and spin-filtering efficiency

Review—Silicene: From Material to Device Applications

“…silicene with chromium dioxide electrodes (CrO 2 ). 165 Figure 16 shows the model of the device. Previously materials like cobalt (Co) have been used as half metallic electrodes for implementing MTJs.…”

Above-room Curie temperature and barrier-layer-dependent tunneling magnetoresistance in 1T-CrO2 monolayer based magnetic tunnel junctions

“…32-35. Nevertheless, all of the aforementioned MTJs are constructed using the CrO 2 bulk phase or films in the lateral heterostructure. [27][28][29][30][31][32][33][34][35] With respect to the lateral MTJs, materials with substantially different lattice structures or processing conditions cannot be epitaxially grown together without the generation of interface disorder. It could severely alter their intrinsic properties 36 and thus dramatically affect the TMR properties.…”

“…29–31 In the past three years, MoS 2 , TiO 2 , CNT and hydrogenated silicene were adopted as tunnel barriers in the CrO 2 based lateral MTJs, and the TMR ratio was reported to be up to 4.48 × 10 14 % in ref. 32–35.…”

Electron scattering in silicene quantum dot with a time-periodic potential

“…This characteristic makes silicene useful in the spintronic applications and semiconductor industry, such as room temperature field-effect transistor (FET) [5]. In recent years, many studies have been focused on the transport properties in silicene structures [6][7][8][9][10][11][12][13][14]. Kharadi et al [11] demonstrated that due to the generation of band gap in silicene via hydrogenation of silicene, the spin-filtering efficiency reaches up to 96%.…”

“…In recent years, many studies have been focused on the transport properties in silicene structures [6][7][8][9][10][11][12][13][14]. Kharadi et al [11] demonstrated that due to the generation of band gap in silicene via hydrogenation of silicene, the spin-filtering efficiency reaches up to 96%. Wei and Tao [14] theoretically investigated the spin and valley polarized transport in a silicene-based F/I/F/S junction and found that the phase shift of the conductance oscillation is brought by the electric field.…”